BC858BWE6327HTSA1

Description：TRANS PNP 30V 0.1A PG-SOT323
Series：-

SKU:2697af0c1ee1 Category: Single Bipolar Transistors Brand: Infineon Technologies

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Product introduction

Product Detailed Parameters

Description：TRANS PNP 30V 0.1A PG-SOT323
Series：-
Mfr：Infineon Technologies
Package：Tape & Reel (TR)
Transistor Type：PNP
Current - Collector (Ic) (Max)：100 mA
Voltage - Collector Emitter Breakdown (Max)：30 V
Vce Saturation (Max) @ Ib, Ic：650mV @ 5mA, 100mA
Current - Collector Cutoff (Max)：15nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce：220 @ 2mA, 5V
Power - Max：250 mW
Frequency - Transition：250MHz
Operating Temperature：150°C (TJ)
Mounting Type：Surface Mount
Package / Case：SC-70, SOT-323
Supplier Device Package：PG-SOT323
Grade：-
Qualification：-

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BC858BWE6327HTSA1

Overview

The BC858BWE6327HTSA1 is a PNP silicon bipolar junction transistor manufactured by Infineon Technologies. It is housed in an SOT-23 surface-mount package and configured as a single transistor. Key electrical specifications include a maximum DC collector current of 100 mA, a collector-emitter voltage (VCEO) of 30 V, and a collector-base voltage (VCBO) of 30 V. The device features a power dissipation rating of 330 mW, an emitter-base voltage (VEBO) of 5 V, and a saturation voltage of 250 mV. It operates within a temperature range of -65 °C to +150 °C.

Feature Summary

PNP silicon construction for general-purpose switching and amplification
SOT-23 surface-mount packaging for compact board integration
High DC current gain with a minimum hFE of 420

Applications

General-purpose signal amplification
Switching applications in consumer electronics
Interface circuits requiring low-voltage operation

Procurement Notes

Verify the specific suffix E6327HTSA1 against official Infineon documentation to confirm tape-and-reel packaging details and RoHS compliance status. Confirm that the BC858BW variant matches the required gain binning and thermal characteristics for the intended design. Cross-reference the manufacturer part number with authorized distributors to ensure authenticity and traceability before procurement.

Selection Notes

Select this component when a PNP transistor with high current gain and a 30 V collector-emitter voltage rating is required in a small SOT-23 footprint. Ensure the application does not exceed the 100 mA continuous collector current limit or the 330 mW power dissipation threshold. Verify that the operating temperature range aligns with the system's environmental constraints.

Part Context

This component belongs to the BC858 series of PNP transistors from Infineon Technologies. The series is designed for general-purpose use in low-power analog and digital circuits. The BC858BW variant specifically denotes a particular gain classification within the broader BC858 family, optimized for consistent performance in mass-produced electronic devices.