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Product Detailed Parameters
- Description：TRANS PNP 30V 0.1A SOT-23-3
- Series：-
- Mfr：Comchip Technology
- Package：Tape & Reel (TR)
- Transistor Type：PNP
- Current - Collector (Ic) (Max)：100 mA
- Voltage - Collector Emitter Breakdown (Max)：30 V
- Vce Saturation (Max) @ Ib, Ic：650mV @ 5mA, 100mA
- Current - Collector Cutoff (Max)：15nA (ICBO)
- DC Current Gain (hFE) (Min) @ Ic, Vce：-
- Power - Max：250 mW
- Frequency - Transition：100MHz
- Operating Temperature：-65°C ~ 150°C (TJ)
- Mounting Type：Surface Mount
- Package / Case：TO-236-3, SC-59, SOT-23-3
- Supplier Device Package：SOT-23-3
- Grade：-
- Qualification：-
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Overview
The BC858C-HF is a single PNP bipolar junction transistor manufactured by Comchip Technology. It utilizes silicon technology and is housed in an SOT-23-3 surface-mount package. The device supports a maximum DC collector current of 100 mA and features a collector-emitter voltage (VCEO) of 30 V, with a collector-base voltage (VCBO) of 30 V and an emitter-base voltage (VEBO) of 5 V. Key electrical characteristics include a saturation voltage of 650 mV, power dissipation of 250 mW, and a gain-bandwidth product (fT) of 100 MHz. The component operates within a temperature range of -65°C to +150°C and offers a DC current gain (hFE) ranging from 420 to 800.
Feature Summary
- Halogen-free construction compliant with environmental standards
- High DC current gain suitable for amplification applications
- Designed for surface-mount assembly via SMD/SMT mounting style
Applications
- General-purpose signal amplification circuits
- Switching applications requiring low current handling
- Audio pre-amplifier stages
Procurement Notes
Verify the manufacturer designation as Comchip Technology on all documentation. Confirm the suffix HF indicates halogen-free compliance. Ensure the ordering part number matches BC858C-HF exactly to avoid confusion with similar BJT variants. Cross-reference the datasheet for specific hFE binning requirements if precise gain thresholds are necessary for the design.
Selection Notes
Select this component when a PNP transistor with moderate voltage ratings and high current gain is required in a compact SOT-23-3 footprint. Consider the 100 mA current limit and 250 mW power dissipation constraints during thermal management planning. Verify that the operating temperature range meets the environmental conditions of the target application.
Part Context
This component belongs to the Bipolar Junction Transistor (BJT) category under the broader Transistors sub-category. It is classified as a single-configuration PNP device intended for general electronic circuit applications. The product line emphasizes standard silicon-based performance metrics within a small outline transistor package format.
Replacement Considerations
Consult official manufacturer substitution guides for verified equivalents. Generic cross-references may not guarantee identical hFE ranges or package tolerances.
