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The BC858CDW1T1 is a dual general-purpose PNP transistor housed in an SOT-363 (SC-88) surface-mount package. It features a collector-emitter voltage of -30 V and a continuous collector current of -100 mA per device. The component provides a DC current gain ranging from 290 to 475 at -10 mA, with a current-gain bandwidth product of 100 MHz. Thermal characteristics include a total device dissipation of 380 mW per device on an FR-5 board and a junction-to-ambient thermal resistance of 328 °C/W.
Verify the specific ordering suffix to confirm package type and reel quantity. Confirm that the procurement matches the exact device code '3L' marking for the BC858CDW1T1 variant. Ensure the source documentation aligns with the manufacturer's preferred device recommendations for long-term supply stability.
Select this component when a dual PNP transistor solution is required for space-constrained designs. The BC858CDW1T1 offers a high current gain range suitable for amplification tasks. Consider the SOT-363 footprint constraints and the -30 V breakdown voltage limits during circuit design.
This part belongs to the BC856/BC857/BC858 series of dual general-purpose transistors manufactured by onsemi. These devices are designed as complementary pairs or individual units within a single six-pin package, optimizing board space for applications requiring multiple switching or amplifying elements.
Compatible substitutes include BC858BDW1T1 and BC857CDW1T1 from the same series. Verify pinout compatibility and electrical parameter alignment before substitution.