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Product Detailed Parameters
- Description：TRANS 2PNP 30V 100MA SC88/SC70
- Series：-
- Mfr：onsemi
- Package：Tape & Reel (TR),Bulk
- Transistor Type：2 PNP (Dual)
- Current - Collector (Ic) (Max)：100mA
- Voltage - Collector Emitter Breakdown (Max)：30V
- Vce Saturation (Max) @ Ib, Ic：650mV @ 5mA, 100mA
- Current - Collector Cutoff (Max)：15nA (ICBO)
- DC Current Gain (hFE) (Min) @ Ic, Vce：420 @ 2mA, 5V
- Power - Max：380mW
- Frequency - Transition：100MHz
- Operating Temperature：-55°C ~ 150°C (TJ)
- Mounting Type：Surface Mount
- Package / Case：6-TSSOP, SC-88, SOT-363
- Supplier Device Package：SC-88/SC70-6/SOT-363
- Grade：-
- Qualification：-
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Overview
The onsemi BC858CDW1T1G is a dual general-purpose PNP transistor array housed in the SOT-363 (SC-88) surface-mount package. It contains two independent PNP transistors designed for low-power applications. Key electrical ratings include a collector-emitter voltage of -30 V, a continuous collector current of -100 mA per device, and a total device dissipation of 380 mW at 25°C. The DC current gain (hFE) ranges from a minimum of 420 to a maximum of 800 when tested at IC = -2.0 mA and VCE = -5.0 V. The transition frequency (fT) is specified at 100 MHz under standard test conditions.
Feature Summary
- Dual PNP configuration within a compact six-pin surface-mount package
- High DC current gain suitable for general-purpose amplifier applications
- Lead-free packaging compliant with environmental directives
Applications
- General purpose amplifier circuits
- Low power surface mount applications
- Signal processing stages requiring dual complementary devices
Procurement Notes
Verify the specific ordering suffix 'G' indicates lead-free compliance as documented in the datasheet. Confirm the package type matches the SOT-363/SC-88 dimensions provided. Ensure the component status aligns with current manufacturing availability, as older series may have lifecycle changes. Cross-reference the marking code '3L' for correct identification upon receipt.
Selection Notes
Select this component for designs requiring two matched PNP transistors in a minimal footprint. The high hFE range supports efficient switching and amplification. Verify that the -30 V collector-emitter rating meets the circuit's voltage requirements. Consider the thermal resistance of 328 °C/W for heat dissipation planning in dense layouts.
Part Context
This part belongs to the BC856BDW1T1, BC857BDW1T1, and BC858CDW1T1 series of preferred dual general-purpose transistors. The BC858 variant specifically offers a -30 V breakdown voltage, distinguishing it from the higher voltage BC856 (-65 V) and BC857 (-45 V) counterparts within the same package family.
Replacement Considerations
Compatible substitutes include BC856BDW1T1G and BC857BDW1T1G from the same manufacturer series. Other manufacturers producing SOT-363 dual PNP arrays with similar -30 V ratings may serve as alternatives if electrical parameters are verified against the original specifications.
