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The BC858CDXV6T5 is a dual PNP general-purpose transistor manufactured by onsemi. It integrates two independent PNP transistors within a single SOT-363 surface-mount package, providing a compact solution for space-constrained designs. The device features a maximum collector-emitter voltage (VCEO) of -30 V and a continuous collector current (IC) of -100 mA. With a DC current gain (hFE) range of C-grade (-110 to -220), it ensures consistent amplification performance. The component operates within a junction temperature range of -55 °C to +150 °C and is available in a tape-and-reel packaging format suitable for automated assembly processes.
Verify the manufacturer marking code and date code on the component body to confirm authenticity. Ensure the ordering suffix matches the required packaging quantity and RoHS compliance status specified in the official datasheet. Cross-reference the part number with authorized distribution channels to avoid counterfeit components.
Select this component when a dual PNP configuration is required in a minimal footprint. Compare the hFE binning requirements against circuit gain specifications. Verify that the SOT-363 thermal characteristics meet the power dissipation limits of the target application environment.
This part belongs to the BC858 series of dual transistors from onsemi. It serves as a complementary counterpart to NPN dual transistor variants within the same product family. The DXV6 suffix indicates the specific SOT-363 package type and standard taping configuration used for high-volume manufacturing integration.
Compatible substitutes include other dual PNP transistors in the SOT-363 package with matching electrical ratings. Verify pinout compatibility and thermal resistance values before substitution.