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The BC858CDXV6T5G is a PNP silicon general-purpose transistor manufactured by onsemi, housed in the SC-70/SOT-323 surface-mount package. It features a maximum collector-emitter voltage of 30 V and a continuous collector current of 100 mA. The device offers a minimum DC current gain (hFE) of 125 at 2 mA and 5 V. It operates within a junction temperature range of -55°C to 150°C and has a maximum power dissipation of 500 mW. The component is Pb-free, halogen-free, and RoHS compliant.
Verify authenticity through authorized channels as this part number may be discontinued or obsolete. Confirm specific lot codes and manufacturing dates against current inventory records. Ensure compliance with environmental standards such as RoHS and REACH requirements for the intended deployment region. Check for alternative packaging options if original reel quantities are unavailable.
Select this component for designs requiring a compact PNP transistor with moderate current handling capabilities. The SOT-323 package suits space-constrained PCB layouts. Verify that the 30 V breakdown voltage meets circuit requirements. Consider thermal management for the 500 mW power dissipation limit in enclosed environments.
This device belongs to the BC858 series of PNP silicon transistors from onsemi. It shares functional similarities with other general-purpose small-signal transistors but is distinguished by its specific pinout and package dimensions. The series is commonly used in consumer electronics and industrial control systems where reliable switching and amplification are required.
Consult official datasheets for direct pin-compatible substitutes from onsemi or other manufacturers. Verify electrical parameters such as hFE, Vceo, and package type before substitution. Ensure thermal characteristics match the original design constraints.