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Product Detailed Parameters
- Description：TRANS PNP 30V 0.1A SOT23-3
- Series：-
- Mfr：onsemi
- Package：Tape & Reel (TR),Cut Tape (CT)
- Transistor Type：PNP
- Current - Collector (Ic) (Max)：100 mA
- Voltage - Collector Emitter Breakdown (Max)：30 V
- Vce Saturation (Max) @ Ib, Ic：650mV @ 5mA, 100mA
- Current - Collector Cutoff (Max)：15nA (ICBO)
- DC Current Gain (hFE) (Min) @ Ic, Vce：420 @ 2mA, 5V
- Power - Max：300 mW
- Frequency - Transition：100MHz
- Operating Temperature：-55°C ~ 150°C (TJ)
- Mounting Type：Surface Mount
- Package / Case：TO-236-3, SC-59, SOT-23-3
- Supplier Device Package：SOT-23-3 (TO-236)
- Grade：-
- Qualification：-
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Overview
The BC858CLT3G is a PNP silicon general-purpose transistor from the onsemi BC856ALT1G series, housed in an SOT-23 (TO-236) surface-mount package. It features a collector-emitter voltage of -30 V and a continuous collector current rating of -100 mA dc. The device offers a minimum DC current gain (hFE) of 420 at IC = -2.0 mA and VCE = -5.0 V. Electrical characteristics include a collector-base breakdown voltage of -30 V and an emitter-base breakdown voltage of -5.0 V. Thermal performance specifies a junction temperature range of -55 to +150 °C with a total device dissipation of 225 mW on an FR-5 board.
Feature Summary
- Designed for general-purpose amplifier and switching applications
- Compliant with RoHS standards and halogen-free manufacturing requirements
- Capable of high DC current gain suitable for signal amplification tasks
Applications
- General purpose amplifier circuits
- Electronic switching applications
- Complementary pairing with NPN devices in the BC846/BC847/BC848/BC849 series
Procurement Notes
Verify that the ordering suffix 'LT3' corresponds to the specific tape and reel packaging configuration required for automated assembly processes. Confirm that the component meets the Pb-Free and Halogen Free specifications mandated by project environmental compliance standards. Ensure the selected variant aligns with the necessary thermal management capabilities for the intended operating environment.
Selection Notes
Select this component when a PNP transistor with a -30 V collector-emitter voltage rating is required for low-power applications. The high hFE characteristic makes it suitable for amplification stages where significant current control is needed with minimal base drive. Consider the SOT-23 package dimensions for PCB layout constraints and verify compatibility with existing complementary NPN counterparts in the design.
Part Context
This component belongs to the BC856ALT1G series manufactured by onsemi, which includes various gain-binned variants such as BC856, BC857, and BC859. These transistors are widely utilized in consumer electronics and industrial equipment requiring reliable small-signal processing. The series provides standardized pinouts and electrical characteristics to facilitate easy integration into existing circuit designs.
Replacement Considerations
Compatible substitutes within the same family include BC858ALT1G and BC858BLT1G, which share identical pin configurations and maximum ratings but differ in DC current gain binning. Verify that any replacement maintains the required hFE range for the specific application circuit.
