SEARCH
— IC芯片 | 连接器 | 传感器 | 被动器件 —
The BC858CMTF is a PNP epitaxial silicon transistor manufactured by onsemi. It features a collector-emitter voltage of -30 V, a continuous collector current of -100 mA, and a maximum power dissipation of 310 mW. The device operates with a junction temperature up to 150 °C and offers a DC current gain (hFE) range of 200 to 450 at -2 mA and -5 V. Packaged in an SOT-23 surface-mount case, it includes a base pin configuration for automated insertion.
Verify the specific hFE classification suffix (A, B, or C) required for your design, as the BC858CMTF corresponds to the 'C' bin (200–450 gain). Confirm that the matte finish package variant meets your environmental specifications. Ensure the tape and reel quantity aligns with your assembly line requirements before finalizing procurement.
Select this component when a PNP general-purpose transistor with a -30 V collector-emitter rating is needed. It serves as the direct complement to the BC848 series. Consider the SOT-23 package for space-constrained designs requiring surface mount technology. Verify thermal management capabilities against the 310 mW dissipation limit for your specific operating conditions.
This part belongs to the BC856–BC860 family of PNP epitaxial silicon transistors originally developed by Fairchild Semiconductor and now managed by onsemi following their integration. The series provides matched pairs for complementary symmetry applications alongside the BC846–BC850 NPN counterparts.
Direct functional substitutes within the same family include BC857CMTF and BC859CMTF, provided voltage ratings meet system requirements.