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The BC858CW-7-F is a PNP small signal transistor manufactured by Diodes Incorporated, housed in an SOT323 surface-mount package. It features a collector-emitter breakdown voltage of -30V and a continuous collector current rating of -100mA. The device belongs to the 'C' gain group, providing a DC current gain (hFE) range of 420 to 800 at VCE = -5.0V and IC = -2.0mA. It operates within a junction temperature range of -55°C to +150°C with a maximum power dissipation of 200mW.
Verify the specific ordering suffix '-7-F' corresponds to the standard marking code K3G on a 7-inch reel containing 3000 units per reel. Confirm that the component meets the required JEDEC standards for high reliability and ensure compliance with EU Directive 2002/95/EC (RoHS), 2011/65/EU (RoHS 2), and 2015/863/EU (RoHS 3).
Select this part when a high-gain PNP transistor is required for low-current switching or amplification tasks. The 'C' suffix indicates a high hFE range (420–800), suitable for applications demanding significant signal amplification. Ensure the circuit design accommodates the -30V collector-emitter voltage limit and the 200mW power dissipation capability under steady-state conditions.
This component is part of the BC856AW through BC858CW family of PNP small signal transistors. While sharing the same SOT323 package and general electrical characteristics, the BC858 variant is distinguished by its lower voltage ratings (-30V VCBO/VCEO) compared to the BC856 (-80V/-65V) and BC857 (-50V/-45V) counterparts.
Direct substitutes include other manufacturers' BC858CW devices in the SOT323 package. For higher voltage requirements within the same package, consider the BC856AW-7-F or BC857AW-7-F. Complementary NPN replacements are available in the BC846AW-BC848CW series.