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Product Detailed Parameters
- Description：TRANS PNP 30V 0.1A SOT23-3
- Series：-
- Mfr：Diotec Semiconductor
- Package：Bulk
- Transistor Type：PNP
- Current - Collector (Ic) (Max)：100 mA
- Voltage - Collector Emitter Breakdown (Max)：30 V
- Vce Saturation (Max) @ Ib, Ic：650mV @ 5mA, 100mA
- Current - Collector Cutoff (Max)：15nA (ICBO)
- DC Current Gain (hFE) (Min) @ Ic, Vce：125 @ 2mA, 5V
- Power - Max：250 mW
- Frequency - Transition：100MHz
- Operating Temperature：-55°C ~ 150°C (TJ)
- Mounting Type：Surface Mount
- Package / Case：TO-236-3, SC-59, SOT-23-3
- Supplier Device Package：SOT-23-3 (TO-236)
- Grade：Automotive
- Qualification：AEC-Q101
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Overview
The BC859A-AQ is a PNP general-purpose bipolar junction transistor manufactured by Diotec Semiconductor. It operates in the SOT-23 (TO-236) surface-mount package and is qualified to AEC-Q101 automotive standards. The device supports a maximum collector current of 100 mA with a peak rating of 200 mA. Voltage ratings include a collector-emitter breakdown voltage of -30 V, a collector-base voltage of -30 V, and an emitter-base voltage of -5 V. Power dissipation is rated at 250 mW. The component features three distinct DC current gain groups: Group A (hFE 180–250), Group B (hFE 290–475), and Group C (hFE 520–800). Transition frequency is specified at 100 MHz, and the operating temperature range spans from -55°C to +150°C.
Feature Summary
- Automotive-grade qualification compliant with AEC-Q101 standards for enhanced reliability
- Three selectable DC current gain groups (A, B, and C) for precise circuit design flexibility
- General-purpose amplification and switching capabilities within a compact SOT-23 footprint
Applications
- Signal processing circuits
- Electronic switching applications
- Amplification stages
Procurement Notes
Verify that the ordering suffix matches the required automotive qualification level. Confirm the specific hFE group (A, B, or C) aligns with circuit requirements. Ensure the SOT-23 package dimensions fit the target PCB layout. Check RoHS compliance status if restricted substances are a concern. Validate thermal resistance parameters against the intended heat dissipation conditions.
Selection Notes
Select this component when automotive reliability is required alongside standard PNP switching performance. Compare the available hFE groups to determine which best suits the biasing needs of the application. Consider the -30 V collector-emitter voltage limit to ensure adequate headroom. Evaluate the 250 mW power dissipation capability relative to the expected load currents and ambient temperatures.
Part Context
This part belongs to the BC856 through BC860 series of SMD general-purpose PNP transistors. It serves as the complementary counterpart to the BC846 through BC850 NPN series. The 'AQ' suffix specifically denotes AEC-Q101 qualification, distinguishing it from commercial (-C) or industrial grade variants without suffixes.
Replacement Considerations
BC859B-AQ
FAQ
What does the AQ suffix indicate for this component?
The AQ suffix indicates that the BC859A-AQ is qualified to the AEC-Q101 automotive standard.
How many current gain groups are available for this transistor?
There are three current gain groups available: Group A, Group B, and Group C.
What is the maximum collector-emitter voltage rating?
The maximum collector-emitter voltage (VCEO) is rated at -30 V.
