BC859BLT3G

$0.02

Description：TRANS PNP 30V 0.1A SOT23-3
Series：-

SKU:43485a8edb68 Category: Single Bipolar Transistors Brand: onsemi

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Product introduction

Product Detailed Parameters

Description：TRANS PNP 30V 0.1A SOT23-3
Series：-
Mfr：onsemi
Package：Tape & Reel (TR),Bulk
Transistor Type：PNP
Current - Collector (Ic) (Max)：100 mA
Voltage - Collector Emitter Breakdown (Max)：30 V
Vce Saturation (Max) @ Ib, Ic：650mV @ 5mA, 100mA
Current - Collector Cutoff (Max)：15nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce：220 @ 2mA, 5V
Power - Max：300 mW
Frequency - Transition：100MHz
Operating Temperature：-55°C ~ 150°C (TJ)
Mounting Type：Surface Mount
Package / Case：TO-236-3, SC-59, SOT-23-3
Supplier Device Package：SOT-23-3 (TO-236)
Grade：-
Qualification：-

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BC859BLT3G

Overview

The BC859BLT3G is a PNP silicon small-signal transistor from the BC856ALT1G series, manufactured by onsemi. It features a collector-emitter voltage of -30 V and a continuous collector current of -100 mA dc. The device operates within a junction temperature range of -55 to +150 °C. Electrical characteristics include a DC current gain (hFE) minimum of 220 at IC = -2.0 mA and VCE = -5.0 V for the 'B' grade. The transition frequency (fT) is typically 100 MHz at IC = -10 mA. Noise figure is specified at 4.0 dB under standard test conditions.

Feature Summary

PNP silicon construction designed for general-purpose switching and amplification applications
Low noise performance suitable for sensitive signal processing circuits
Automotive qualification available with S and NSV prefixes via AEC-Q101 standards

Applications

General purpose amplification in consumer electronics
Switching applications requiring low power consumption
Signal conditioning in automotive electronic control units

Procurement Notes

Verify the specific ordering suffix matches the required tape and reel quantity. Confirm that the 'L' designation corresponds to the 10,000-unit packaging format as listed in the official documentation. Ensure the presence of the Pb-Free indicator aligns with project compliance requirements. Cross-reference the marking code '4B' to validate the device identity upon receipt.

Selection Notes

Select this component when a PNP transistor with a -30 V collector-emitter breakdown voltage is required. The 'B' grading provides a guaranteed minimum hFE of 220, distinguishing it from lower gain variants. Consider the SOT-23 package constraints for thermal dissipation limits. Verify compatibility with the intended circuit's base drive currents and saturation voltage requirements.

Part Context

This part belongs to the BC856ALT1G series, which groups multiple gain grades and voltage ratings into a single datasheet. The BC859 variant specifically denotes the -30 V rating, while the BLT3G suffix indicates the SOT-23 package and 10,000-unit tape and reel shipping configuration. It shares the same physical footprint and pinout as other members of the family.

Replacement Considerations

Direct substitutes within the same series include BC859CLT3G for higher gain applications or BC857BLT3G if a -45 V rating is acceptable. Verify that any replacement maintains the SOT-23 (TO-236) package style and compatible electrical parameters for the specific circuit design.

FAQ

What is the DC current gain specification for the BC859BLT3G?

The 'B' grade specifies a minimum DC current gain (hFE) of 220 when measured at a collector current of -2.0 mA and a collector-emitter voltage of -5.0 V.

Is the BC859BLT3G qualified for automotive applications?

Standard BC859BLT3G parts are not explicitly marked as automotive qualified. However, devices with the 'S' or 'NSV' prefix in this series are AEC-Q101 qualified and PPAP capable.