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The BC859C-AQ is a PNP general-purpose bipolar junction transistor manufactured by Diotec Semiconductor. It utilizes an SOT-23 surface-mount package and operates with a maximum collector current of 100 mA and a collector-emitter voltage of -30 V. The device features a DC current gain (hFE) group C range of 420 to 800 at IC = 2 mA. It complies with AEC-Q101 automotive standards, supports a maximum power dissipation of 300 mW on a PCB, and functions within a junction temperature range of -55°C to +150°C.
Verify the specific suffix AQ against official Diotec documentation to confirm AEC-Q101 qualification status. Ensure the ordering code matches the required hFE binning for Group C characteristics. Confirm that the SOT-23 package dimensions align with the target PCB footprint requirements before finalizing procurement.
Select this component when high current gain is required for low-current signal amplification or precise switching control. The AEC-Q101 qualification makes it suitable for automotive environments where standard commercial grade parts may not suffice. Consider the thermal resistance values when designing heat dissipation strategies for dense PCB layouts.
This part belongs to the BC856...BC860 series of SMD universal PNP transistors from Diotec Semiconductor. The series covers various voltage ratings and gain groups, providing complementary options to NPN transistors like the BC846...BC850 series. The BC859 variant specifically targets lower voltage applications compared to the higher voltage BC856 or BC857 models.
BC859C
The 'AQ' suffix indicates that the component is AEC-Q101 qualified, meeting specific automotive reliability standards.
The BC859C-AQ belongs to Group C, which specifies a DC current gain (hFE) range of 420 to 800 at IC = 2 mA and VCE = 5 V.
Yes, the BC859C-AQ is compliant with RoHS directives without exemptions and is also REACH compliant.