BC859CW

$0.03

Description：TRANS PNP 30V 0.1A SOT-323
Series：-

SKU:571c3fdcd67d Category: Single Bipolar Transistors Brand: Diotec Semiconductor

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Product introduction

Product Detailed Parameters

Description：TRANS PNP 30V 0.1A SOT-323
Series：-
Mfr：Diotec Semiconductor
Package：Bulk
Transistor Type：PNP
Current - Collector (Ic) (Max)：100 mA
Voltage - Collector Emitter Breakdown (Max)：30 V
Vce Saturation (Max) @ Ib, Ic：650mV @ 5mA, 100mA
Current - Collector Cutoff (Max)：15nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce：420 @ 2mA, 5V
Power - Max：200 mW
Frequency - Transition：100MHz
Operating Temperature：-55°C ~ 150°C (TJ)
Mounting Type：Surface Mount
Package / Case：SC-70, SOT-323
Supplier Device Package：SOT-323
Grade：-
Qualification：-

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BC859CW

Overview

The Diotec Semiconductor BC859CW is a surface-mount PNP general-purpose bipolar junction transistor housed in an SOT-323 package. It supports a maximum collector current of 100 mA and features a collector-emitter breakdown voltage (VCEO) of -30 V. The device offers three DC current gain (hFE) groups: Group A (140–250), Group B (220–475), and Group C (420–800). Power dissipation is rated at 200 mW, with a maximum junction temperature of +150°C.

Feature Summary

Designed for universal signal processing, switching, and amplification applications
Available in three distinct DC current gain groups to match circuit requirements
Compliant with RoHS directives without exemptions and REACH regulations

Applications

Signal processing circuits
Electronic switching applications
Amplification stages

Procurement Notes

Verify the specific hFE group suffix required for your design, as the base model covers Groups A, B, and C. Confirm compliance needs such as AEC-Q101 qualification if automotive standards are necessary. Check the latest datasheet version for any mechanical or marking code updates before finalizing component selection.

Selection Notes

Select this component when a low-voltage (-30 V) PNP switch or amplifier is needed in a compact SOT-323 footprint. Ensure the chosen hFE group meets the biasing requirements of the target circuit. Verify that the 200 mW power dissipation rating aligns with the thermal constraints of the PCB layout.

Part Context

This part belongs to the BC856AW through BC859CW series of SMD general-purpose PNP transistors. The BC859CW specifically denotes the -30 V variant within this family, complementing higher voltage options like the BC856AW (-65 V). It is designed for commercial and industrial grade standard applications.