BC860BWE6327HTSA1

Overview

The BC860BE6327HTSA1 is a dual PNP silicon bipolar junction transistor (BJT) from Infineon Technologies, housed in an SOT-23-3 surface-mount package. It features a maximum collector current of 200 mA and a collector-emitter voltage rating of 45 V. The device operates within a temperature range of -65°C to +150°C and is qualified under the AEC-Q100 automotive standard.

Feature Summary

• Dual PNP configuration for compact circuit integration
• Automotive qualification compliant with AEC-Q100 standards
• High thermal stability supporting extended operating temperatures

Applications

• General-purpose switching circuits
• Interface logic level translation
• Driver stages for low-power loads

Procurement Notes

Verify the exact part number suffix against official documentation, as variations exist between BC860B and BCR series components. Confirm RoHS compliance status and specific binning requirements directly with the manufacturer or authorized distributors before finalizing procurement orders.

Selection Notes

Select this component for applications requiring dual PNP transistors in a minimal footprint. Ensure the design accounts for the 45V voltage limit and 200mA current capacity. Verify that the SOT-23-3 package thermal dissipation meets the system's power constraints during continuous operation.

Part Context

This component belongs to the BC860 series of small-signal bipolar transistors. It is designed for general-purpose amplification and switching tasks. The dual configuration allows for efficient use of board space in complex electronic assemblies requiring multiple PNP switching elements.

Replacement Considerations

Consult official datasheets for pin-compatible alternatives within the same series. Verify electrical parameter equivalence for voltage, current, and gain specifications before substituting.