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The BC860CE6359HTMA1 is a PNP silicon bipolar junction transistor manufactured by Infineon Technologies. It operates within a collector-emitter voltage of 45 V and supports a continuous collector current of 100 mA. The device features a transition frequency of 250 MHz and power dissipation of 330 mW in a SOT-23 package. It complies with AEC-Q100 automotive standards, ensuring reliability for demanding environments.
Verify the specific suffix HTMA1 to confirm the tape and reel packaging configuration and binning class. Ensure the component meets AEC-Q100 requirements if deployed in automotive contexts. Cross-reference the datasheet for thermal resistance values under your specific PCB layout conditions to guarantee safe operating area compliance during operation.
Select this PNP transistor when a low-noise, high-gain solution is required for compact designs. The SOT-23 form factor suits space-constrained boards. Consider the 45 V rating and 100 mA current limit against load requirements. Verify that the 250 MHz bandwidth aligns with signal frequencies. Confirm automotive qualification needs match the AEC-Q100 certification status.
This part belongs to the BC860 series of general-purpose bipolar transistors. It represents Infineon's silicon-based discrete semiconductor offerings designed for versatile amplification and switching tasks. The series provides standardized electrical characteristics suitable for widespread industrial and consumer electronics integration.
Consult official cross-reference lists for compatible PNP SOT-23 transistors with matching 45 V ratings and similar gain bandwidth products. Verify pinout compatibility before substitution.