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The BCM56DSX is a dual NPN bipolar junction transistor manufactured by Nexperia, housed in a TSOP-6 (SOT457/SC-74) surface-mount package. It features a maximum collector current of 1 A and a collector-emitter voltage rating of 80 V. The device operates with a collector-base voltage of 100 V and an emitter-base voltage of 5 V. Key electrical parameters include a DC current gain ranging from 63 to 250, a transition frequency of 155 MHz, and a power dissipation capacity of 400 mW. The component supports a wide operating temperature range from -55°C to +150°C.
Verify the specific suffix against official Nexperia documentation to confirm packaging type and reel specifications. Ensure compatibility with SMD/SMT assembly processes. Confirm RoHS compliance status through the manufacturer's latest datasheet before finalizing procurement orders.
Select this component for designs requiring dual NPN transistors in small outline packages. Consider the 80 V collector-emitter voltage and 1 A current limits when sizing for load requirements. Evaluate thermal management needs given the 400 mW power dissipation rating in the TSOP-6 package.
This part belongs to Nexperia's portfolio of silicon-based bipolar junction transistors. It shares functional similarities with other dual NPN devices in the BCX series but offers distinct packaging advantages. The SC-74 form factor provides space efficiency for dense circuit board layouts.
Check for direct substitutes such as the BCM56DSF variant, which may differ only in packaging or tape-and-reel specifications. Verify pinout compatibility and electrical parameter equivalence before substituting.