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The BCM846BSH-Q is an NPN/NPN matched double transistor manufactured by Nexperia, housed in a compact SOT363 (SC-88) surface-mounted plastic package. It supports a collector-emitter voltage of 65 V and a continuous collector current of 100 mA per transistor. The device features closely matched DC current gain (hFE range: 200 to 450 at 2 mA) and base-emitter voltage matching within 2 mV. Qualified under AEC-Q101 standards, it operates with a junction temperature up to 175 °C and total power dissipation of 400 mW.
Verify the specific ordering suffix against official Nexperia documentation to confirm packaging details and manufacturing site codes. Ensure compliance with AEC-Q101 requirements if deploying in automotive environments. Confirm thermal management strategies align with the specified power derating curves on FR4 PCBs.
Select this component when precise matching between two NPN transistors is required in a minimal footprint. The SOT363 package offers space efficiency compared to discrete single transistors. Consider the 175 °C junction temperature capability for high-thermal-stress designs requiring robust performance stability.
This part belongs to the BCM846BS family of matched double transistors designed for general-purpose switching and amplification. It serves as a drop-in replacement for standard double transistors while providing improved matching characteristics. The PNP/PNP complement is the BCM856BSH-Q.
BCM846BS-Q
The maximum junction temperature is 175 °C.
The difference between the larger and smaller base-emitter voltage values is limited to a maximum of 2 mV under specified conditions.
Yes, it is qualified according to AEC-Q101 and recommended for use in automotive applications.