BCM846BSH-QX

BCM846BSH-QX

$0.08
  • Description:TRANS 2NPN 65V 100MA 6-TSSOP
  • Series:-

SKU:d739093262ce Category: Brand:

  
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Product Detailed Parameters

  • Description:TRANS 2NPN 65V 100MA 6-TSSOP
  • Series:-
  • Mfr:Nexperia USA Inc.
  • Package:Tape & Reel (TR)
  • Transistor Type:2 NPN (Dual)
  • Current - Collector (Ic) (Max):100mA
  • Voltage - Collector Emitter Breakdown (Max):65V
  • Vce Saturation (Max) @ Ib, Ic:400mV @ 5mA, 100mA
  • Current - Collector Cutoff (Max):15nA (ICBO)
  • DC Current Gain (hFE) (Min) @ Ic, Vce:200 @ 2mA, 5V
  • Power - Max:200mW
  • Frequency - Transition:250MHz
  • Operating Temperature:150°C (TJ)
  • Mounting Type:Surface Mount
  • Package / Case:6-TSSOP, SC-88, SOT-363
  • Supplier Device Package:6-TSSOP
  • Grade:Automotive
  • Qualification:AEC-Q101

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BCM846BSH-QX

Overview

The BCM846BSH-Q is an NPN/NPN matched double transistor manufactured by Nexperia, housed in a compact SOT363 (SC-88) surface-mounted plastic package. It supports a collector-emitter voltage of 65 V and a continuous collector current of 100 mA per transistor. The device features closely matched DC current gain (hFE range: 200 to 450 at 2 mA) and base-emitter voltage matching within 2 mV. Qualified under AEC-Q101 standards, it operates with a junction temperature up to 175 °C and total power dissipation of 400 mW.

Feature Summary

  • AEC-Q101 qualified for automotive applications
  • High-temperature operation up to 175 °C
  • Low collector capacitance and saturation voltage
  • Current gain and base-emitter voltage matching

Applications

  • Current mirror circuits
  • Differential amplifier configurations

Procurement Notes

Verify the specific ordering suffix against official Nexperia documentation to confirm packaging details and manufacturing site codes. Ensure compliance with AEC-Q101 requirements if deploying in automotive environments. Confirm thermal management strategies align with the specified power derating curves on FR4 PCBs.

Selection Notes

Select this component when precise matching between two NPN transistors is required in a minimal footprint. The SOT363 package offers space efficiency compared to discrete single transistors. Consider the 175 °C junction temperature capability for high-thermal-stress designs requiring robust performance stability.

Part Context

This part belongs to the BCM846BS family of matched double transistors designed for general-purpose switching and amplification. It serves as a drop-in replacement for standard double transistors while providing improved matching characteristics. The PNP/PNP complement is the BCM856BSH-Q.

Replacement Considerations

BCM846BS-Q

FAQ

What is the maximum junction temperature for the BCM846BSH-Q?

The maximum junction temperature is 175 °C.

How is the base-emitter voltage matching defined?

The difference between the larger and smaller base-emitter voltage values is limited to a maximum of 2 mV under specified conditions.

Is this component suitable for automotive use?

Yes, it is qualified according to AEC-Q101 and recommended for use in automotive applications.

BCM846BSH-QXBCM846BSH-QX
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