BCM846BSHF

Overview

The BCM846BSH is an NPN/NPN matched double transistor housed in a SOT363 (SC-88) surface-mount package. It features a collector-emitter voltage of 65 V and a continuous collector current of 100 mA per transistor. The device provides a DC current gain (hFE) ranging from 200 to 450 at 2 mA. Key electrical characteristics include a transition frequency of 100 MHz, low collector capacitance of 1.2 pF, and tight matching parameters with a base-emitter voltage difference of max 2 mV and current gain ratio between 0.95 and 1.05. Total power dissipation reaches 400 mW per device, supporting operation up to a junction temperature of 175 °C.

Feature Summary

• NPN/NPN matched double transistor configuration
• High-temperature capability up to 175 °C junction temperature
• Low collector capacitance for high-frequency performance
• Tight base-emitter voltage and current gain matching

Applications

• Current mirror circuits
• Differential amplifier stages

Procurement Notes

Verify the specific ordering suffix against the manufacturer's official documentation to confirm packaging details and manufacturing site codes. Ensure that the procurement specifications align with the absolute maximum ratings defined in the product data sheet to prevent device stress during operation.

Selection Notes

Select this component when precise matching between two NPN transistors is required within a compact SOT363 footprint. The device is suitable for applications demanding low saturation voltage and minimal mutual interference between the dual transistors. Consider the thermal resistance values when designing heat dissipation strategies for high ambient temperatures.

Part Context

This part belongs to Nexperia's series of small-signal matched double transistors designed for space-constrained surface-mount applications. It serves as a drop-in replacement for standard double transistors while offering improved thermal performance and tighter electrical matching compared to discrete individual components.

Replacement Considerations

The PNP/PNP complement is the BCM856BSH. Verify pin compatibility and polarity requirements before substituting with other manufacturers' equivalents, as internal pinouts may differ despite similar external packages.

FAQ

What is the maximum junction temperature for the BCM846BSH?

The maximum junction temperature is 175 °C.

How is the base-emitter voltage matching specified?

The base-emitter voltage matching is specified as a maximum difference of 2 mV between the two transistors under conditions of VCE = 5 V, IC = 2 mA, and Tamb = 25 °C.

What is the total power dissipation rating for the device?

The total power dissipation is 400 mW per device when mounted on an FR4 printed-circuit board at an ambient temperature of 25 °C or lower.