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The BCM846SH6327XTSA1 is a dual NPN bipolar junction transistor from Infineon Technologies, housed in a SOT-363-6 surface-mount package. It features a maximum collector-emitter voltage (VCEO) of 65 V and a continuous collector current of 100 mA. The device exhibits a DC current gain (hFE) ranging from 200 to 450 and a transition frequency (fT) of 250 MHz. Operating within a temperature range of -65°C to +150°C, it dissipates up to 250 mW of power. This component is designed for audio frequency applications and complies with RoHS standards.
Verify the specific suffix against official Infineon documentation to confirm tape-and-reel packaging details. Ensure compatibility with existing PCB footprints for the SOT-363-6 package. Confirm that the 65 V rating meets circuit requirements. Check for end-of-life status or alternative sourcing if long-term supply stability is required.
Select this component when a dual NPN configuration is needed in a minimal footprint. The 250 MHz transition frequency supports audio and moderate-speed signal processing. Compare hFE ranges against circuit biasing needs. Consider thermal dissipation limits relative to ambient operating temperatures.
This part belongs to the BC846 series of small-signal NPN transistors. It provides a dual-transistor solution in a single SOT-363-6 package, replacing discrete components to save board space. The series is widely used in portable devices and audio equipment due to its low noise characteristics and high gain bandwidth product.
BC846DWH6327XTSA1
The maximum collector-emitter voltage (VCEO) is 65 V.
No, the BCM846S is a dual NPN transistor without built-in base resistors.
The transition frequency (fT) is 250 MHz.