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Product Detailed Parameters
- Description：TRANS 2NPN 45V 100MA SOT-363
- Series：-
- Mfr：Diotec Semiconductor
- Package：Tape & Reel (TR),Cut Tape (CT)
- Transistor Type：2 NPN
- Current - Collector (Ic) (Max)：100mA
- Voltage - Collector Emitter Breakdown (Max)：45V
- Vce Saturation (Max) @ Ib, Ic：600mV @ 5mA, 100mA
- Current - Collector Cutoff (Max)：15nA (ICBO)
- DC Current Gain (hFE) (Min) @ Ic, Vce：200 @ 2mA, 5V
- Power - Max：250mW
- Frequency - Transition：100MHz
- Operating Temperature：-55°C ~ 150°C (TJ)
- Mounting Type：Surface Mount
- Package / Case：6-VSSOP, SC-88, SOT-363
- Supplier Device Package：SOT-363
- Grade：-
- Qualification：-
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Overview
The BCM847BS is a dual NPN small-signal transistor in an SOT-363 package. It features a collector-emitter voltage (VCEO) of 45 V and a continuous collector current (IC) of 100 mA. The device has a maximum power dissipation (Ptot) of 250 mW at 25°C, rising to 300 mW with specific board mounting. DC current gain (hFE) ranges from 200 to 450 at IC = 2 mA and VCE = 5 V. The junction temperature range is -55°C to +150°C. Key electrical characteristics include a base-emitter saturation voltage of 600 mV max at IC=100mA/IB=5mA, and a transition frequency (fT) of 100 MHz.
Feature Summary
- Dual NPN transistors with closely matched DC current gain and base-emitter voltage for precision applications.
- Low collector capacitance and low collector-emitter saturation voltage to enhance switching performance.
- No mutual interference between the internal transistors, allowing independent operation within a compact footprint.
Applications
- Current mirrors
- Differential amplifiers
- General-purpose switching and amplification
Procurement Notes
Verify the specific ordering suffix when sourcing. Standard versions are commercial grade. Suffixes such as -Q indicate AEC-Q101 compliance, while -AQ denotes qualification status. Confirm RoHS, REACH, and conflict mineral declarations match project requirements before finalizing procurement.
Selection Notes
Select this component for designs requiring matched NPN pairs in a minimal surface-mount footprint. Ensure the 45 V collector-emitter rating meets circuit voltage limits. Consider the 250 mW thermal dissipation limit and verify PCB copper pad sizing for adequate heat sinking if operating near maximum ratings.
Part Context
This part belongs to the BCM84xBS series of matched double transistors. It serves as the NPN counterpart to the PNP BCM857BS. The series is designed to reduce component count and board space by integrating two precisely matched transistors into a single SOT-363 package.
Replacement Considerations
BCM847BV
FAQ
What is the maximum collector-emitter voltage?
The maximum collector-emitter voltage (VCEO) is 45 V.
How is the DC current gain matched?
The ratio of hFE1/hFE2 is matched to be between 0.9 and 1.1 at VCE = 5 V and IC = 2 mA.
What does the -Q suffix indicate?
The -Q suffix indicates that the device is compliant with the AEC-Q101 automotive standard.
