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Product Detailed Parameters
- Description：TRANS 2NPN 45V 100MA SOT-666
- Series：-
- Mfr：Nexperia USA Inc.
- Package：Tape & Reel (TR)
- Transistor Type：2 NPN (Dual) Matched Pair
- Current - Collector (Ic) (Max)：100mA
- Voltage - Collector Emitter Breakdown (Max)：45V
- Vce Saturation (Max) @ Ib, Ic：400mV @ 5mA, 100mA
- Current - Collector Cutoff (Max)：15nA (ICBO)
- DC Current Gain (hFE) (Min) @ Ic, Vce：200 @ 2mA, 5V
- Power - Max：300mW
- Frequency - Transition：250MHz
- Operating Temperature：150°C (TJ)
- Mounting Type：Surface Mount
- Package / Case：SOT-563, SOT-666
- Supplier Device Package：SOT-666
- Grade：-
- Qualification：-
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Overview
The BCM847BV,315 is an NPN/NPN matched double transistor manufactured by Nexperia in a SOT666 ultra-small Surface-Mounted Device plastic package. The internal transistors are fully isolated. Key electrical parameters include a collector-emitter voltage (VCEO) of 45 V and a collector current (IC) of 100 mA per transistor. The DC current gain (hFE) ranges from 200 to 450 at VCE = 5 V and IC = 2 mA. The device features tight matching specifications, with base-emitter voltage matching limited to 2 mV and DC current gain matching ratio between 0.9 and 1. Total power dissipation is 300 mW for the device and 200 mW per transistor at Tamb ≤ 25 °C.
Feature Summary
- Current gain matching ensures consistent performance across both transistors.
- Base-emitter voltage matching minimizes offset errors in paired configurations.
- Functions as a drop-in replacement for standard double transistors.
Applications
- Current mirror circuits
- Differential amplifier stages
Procurement Notes
Verify component authenticity through authorized Nexperia distributors or direct channels. Confirm the specific ordering suffix matches project requirements. Review the latest product data sheet for any updates to specifications or legal disclaimers before finalizing procurement plans.
Selection Notes
Select this component when precise matching between two NPN transistors is required within a compact footprint. Ensure thermal management accounts for the 300 mW total power dissipation limit. Verify that the SOT666 package dimensions fit the available PCB space.
Part Context
This part is the matched version of the BC847BV single transistor. It serves as the NPN counterpart to the BMC857BV PNP/PNP matched double transistor. Both devices utilize the same SOT666 package format for complementary circuit designs.
Replacement Considerations
BC847BV
FAQ
What is the maximum base-emitter voltage difference allowed between the two transistors?
The base-emitter voltage matching (VBE1−VBE2) is specified as a maximum of 2 mV under conditions of VCE = 5 V, IC = 2 mA, and Tamb = 25 °C.
Is this component suitable for automotive applications?
No. The product data sheet explicitly states that this product is not automotive qualified and has not been tested according to automotive standards.
What is the recommended soldering method for the SOT666 package?
Reflow soldering is the only recommended soldering method for this component.
