BCM847DS/DG/B2 115

Overview

The BCM847DS/DG/B2 115 is a dual NPN bipolar junction transistor (BJT) manufactured by Nexperia, distributed under the NXP Semiconductors portfolio. It is housed in a TSOP-6 (SC-74/SOT457) surface-mount package with dimensions of 2.2mm length and 1.1mm height. The device features a maximum DC collector current (Idc) of 100 mA and a collector-emitter voltage (Vceo) of 45 V. Key electrical parameters include a collector-base voltage (VCBO) of 50 V, an emitter-base voltage (VEBO) of 6 V, and a power dissipation (Pd) of 380 mW. The minimum DC current gain (hFE) is 200 at 2 mA and 5 V, with a transition frequency (fT) of 250 MHz. It operates within a temperature range of -65°C to +150°C.

Feature Summary

• Dual NPN configuration for compact circuit integration
• High DC current gain ensuring efficient signal amplification
• Automotive-grade reliability compliant with AEC-Q101 standards

Applications

• General-purpose switching and amplification in consumer electronics
• Signal processing in industrial control systems
• Component usage in automotive electronic modules requiring AEC-Q101 compliance

Procurement Notes

Verify the specific suffix (DS, DG, or B2) against the required datasheet revision and tape-and-reel specifications. Confirm that the component meets the intended environmental operating conditions, specifically the extended temperature range up to 150°C. Ensure compatibility with the target PCB footprint for the TSOP-6 package during the procurement phase.

Selection Notes

Select this component when a dual NPN transistor is required in a minimal footprint SC-74 package. It is suitable for applications demanding high current gain and moderate voltage ratings. Consider the 380 mW power dissipation limit and thermal management requirements for the specific board layout. Verify if the AEC-Q101 qualification is necessary for the end application.

Part Context

This part belongs to the BCM847 series of dual NPN transistors from Nexperia. It is commonly used as a substitute for other small-signal dual transistors in space-constrained designs. The series is characterized by high hFE and low saturation voltages, making it suitable for logic interface and general switching tasks in modern electronic devices.

Replacement Considerations

Check pinout compatibility with existing designs using single transistors or other dual configurations. Verify that alternative parts meet the 45V Vceo and 100mA Idc requirements. Ensure the replacement package matches the TSOP-6 form factor for direct PCB substitution.