BCM847DS,135

Overview

The BCM847DS,135 is an NPN/NPN matched double transistor manufactured by Nexperia USA Inc. It is housed in a SOT457 (SC-74; TSOP6) surface-mounted plastic package with six leads. The device features fully isolated internal transistors and is qualified according to the AEC-Q101 standard for automotive applications. Key electrical parameters include a collector-emitter voltage (VCEO) of 45 V, a collector current (IC) of 100 mA per transistor, and a total power dissipation (Ptot) of 380 mW for the device at Tamb ≤ 25 °C. The DC current gain (hFE) ranges from 200 to 450 at IC = 2 mA and VCE = 5 V. The transition frequency (fT) reaches up to 250 MHz.

Feature Summary

• Current gain matching between paired transistors
• Base-emitter voltage matching within 2 mV
• AEC-Q101 qualification for automotive use

Applications

• Current mirror circuits
• Differential amplifier configurations

Procurement Notes

Verify the specific ordering suffix against official Nexperia documentation to confirm packaging details. Confirm that the component meets the required AEC-Q101 automotive qualification standards for the intended application environment. Ensure compatibility with the specified SC-74 (SOT457) footprint during PCB layout.

Selection Notes

Select this component when precise matching of DC current gain and base-emitter voltage is required for analog signal processing. The AEC-Q101 qualification makes it suitable for automotive electronics where reliability under varying thermal conditions is critical. Consider the 380 mW total power dissipation limit when designing thermal management strategies.

Part Context

The BCM847DS belongs to the BCM847 family of matched double transistors. Its PNP/PNP complement is the BCM857DS. Both devices utilize the same SOT457 package and are designed as drop-in replacements for standard discrete double transistors in space-constrained designs requiring matched characteristics.

Replacement Considerations

BCM857DS serves as the direct PNP/PNP complement.