BCM856BS,115

Overview

The BCM856BS,115 is a PNP/PNP matched double transistor manufactured by Nexperia. It is housed in a SOT363 (SC-88) surface-mounted device plastic package with six leads. The device features fully isolated internal transistors and is qualified to the AEC-Q101 standard for automotive applications. Key electrical parameters include a collector-emitter voltage of -65 V, a collector current of -100 mA, and a total power dissipation of 300 mW per device at 25 °C. The DC current gain ranges from 200 to 450, with a typical transition frequency of 175 MHz.

Feature Summary

• Current gain matching between transistors
• Base-emitter voltage matching
• Drop-in replacement for standard double transistors
• AEC-Q101 qualified for automotive use

Applications

• Current mirror
• Differential amplifier

Procurement Notes

Verify the ordering suffix

Selection Notes

Select this component when matched PNP characteristics are required in a compact SOT363 footprint. Ensure design limits stay within the -65 V collector-emitter voltage and -100 mA collector current ratings. Consider the 300 mW total power dissipation limit for thermal management on FR4 PCBs.

Part Context

This part belongs to the BCM856 series of matched double transistors. The BCM856DS variant uses a larger SOT457 package. The NPN complement for this device family is the BCM846BS. These components are designed for general-purpose switching and amplification where tight parameter matching is critical.

Replacement Considerations

BCM856BS/DG serves as an alternative marking code version within the same SOT363 package and electrical specification.

FAQ

What is the maximum junction temperature for the BCM856BS?

The maximum junction temperature is 150 °C.

Is the BCM856BS suitable for automotive applications?

Yes, the device is qualified in accordance with the AEC-Q101 standard.

What is the typical base-emitter saturation voltage at high current?

At IC = -100 mA and IB = -5 mA, the typical VBEsat is -920 mV.