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The BCM856BSF is a PNP/PNP matched double transistor manufactured by Nexperia USA Inc. It is housed in the SOT363 (SC-88) surface-mounted device plastic package. The device features fully isolated internal transistors with specific matching characteristics for current gain and base-emitter voltage. Key electrical parameters include a collector-emitter voltage of -65 V, a collector current of -100 mA per transistor, and a total power dissipation of 300 mW. The DC current gain ranges from 200 to 450 at VCE = -5V and IC = -2mA. The transition frequency is typically 175 MHz. It operates within an ambient temperature range of -55°C to +150°C and is qualified to AEC-Q101 standards.
Verify the exact ordering suffix against the manufacturer's official documentation to ensure correct packing method and manufacturing origin. Confirm that the component meets all required automotive qualification standards if used in such environments. Cross-reference the datasheet revision date to ensure the latest specifications are applied during design validation.
Select this component when matched transistor pairs are required for precision analog applications. The SOT363 package offers a small footprint suitable for space-constrained designs. Ensure the operating conditions remain within the specified absolute maximum ratings to prevent device damage. Consider the thermal resistance values when designing heat dissipation strategies for high-density PCB layouts.
The BCM856BS belongs to the BCM856 series of PNP/PNP matched double transistors produced by Nexperia. This series includes variants like the BCM856DS which utilizes the SOT457 package. The devices are designed as drop-in replacements for standard double transistors while offering improved matching characteristics due to their monolithic construction on silicon.
BCM856BS/DG