SEARCH
— IC芯片 | 连接器 | 传感器 | 被动器件 —
The BCM856BSH is a PNP/PNP matched double transistor manufactured by Nexperia, housed in a TSSOP6 (SOT363) surface-mount package. It features a collector-emitter voltage of -65 V and a continuous collector current of -100 mA per transistor. The device offers a DC current gain (hFE) ranging from 200 to 450 at -2 mA. Key electrical characteristics include a collector-base breakdown voltage of -80 V, an emitter-base breakdown voltage of -7 V, and a total power dissipation of 400 mW for the dual device. The transition frequency is specified at 100 MHz.
Verify the specific ordering suffix against the manufacturer's official documentation to confirm packaging details such as reel or cut tape specifications. Ensure that the component status aligns with production requirements, as datasheet versions may indicate development or qualification stages rather than full production availability.
Select this component when matched PNP transistors are required in a compact SOT363 footprint. Consider the -65 V rating and 100 mA current limit for general-purpose switching or amplification. Verify thermal resistance values against the PCB copper area and ambient temperature conditions to ensure operation within the 175 °C junction temperature limit.
This part belongs to Nexperia's small Surface-Mounted Device plastic package series designed for space-constrained designs. It serves as the PNP/PNP counterpart to the NPN/NPN BCM846BSH. The device provides matched characteristics suitable for precision analog applications where component symmetry is critical.
BCM846BSH is the NPN/NPN complement. Standard double transistors in larger packages may serve as drop-in replacements if pin compatibility allows.