BCM856DS,115

Overview

The BCM856DS,115 is a PNP/PNP matched double transistor manufactured by Nexperia in the SOT457 (SC-74) surface-mount package. It features fully isolated internal transistors with a collector-emitter voltage of -65 V and a continuous collector current of -100 mA per device. The component offers a DC current gain ranging from 200 to 450 at -2 mA and -5 V. Key electrical characteristics include a transition frequency of 175 MHz and a total power dissipation of 380 mW for the dual device configuration. It operates within an ambient temperature range of -55 °C to +150 °C.

Feature Summary

• Current gain matching between transistors
• Base-emitter voltage matching
• Fully internally isolated transistors
• AEC-Q101 qualified for automotive applications

Applications

• Current mirror circuits
• Differential amplifier configurations

Procurement Notes

Verify the specific ordering suffix against official Nexperia documentation to confirm packaging details and manufacturing origin. Ensure compatibility with AEC-Q101 requirements if used in automotive designs. Confirm that the SOT457 footprint matches the target PCB layout before finalizing procurement orders.

Selection Notes

Select this component when matched PNP transistor pairs are required for precision analog applications. The SOT457 package provides a compact solution compared to standard discrete packages. Consider the thermal resistance values when designing heat dissipation strategies for high-density layouts.

Part Context

This part belongs to the BCM856 series of matched double transistors. It shares functional similarities with the BCM856BS but utilizes the larger SOT457 package instead of the SOT363. The series is designed as a drop-in replacement for standard double transistors in existing circuit designs requiring matched characteristics.

Replacement Considerations

BCM856BS,115