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Product Detailed Parameters
- Description：TRANS 2PNP 65V 0.1A PG-SOT363-PO
- Series：-
- Mfr：Infineon Technologies
- Package：Tape & Reel (TR),Cut Tape (CT)
- Transistor Type：2 PNP (Dual)
- Current - Collector (Ic) (Max)：100mA
- Voltage - Collector Emitter Breakdown (Max)：65V
- Vce Saturation (Max) @ Ib, Ic：650mV @ 5mA, 100mA
- Current - Collector Cutoff (Max)：15nA (ICBO)
- DC Current Gain (hFE) (Min) @ Ic, Vce：200 @ 2mA, 5V
- Power - Max：250mW
- Frequency - Transition：250MHz
- Operating Temperature：150°C (TJ)
- Mounting Type：Surface Mount
- Package / Case：6-VSSOP, SC-88, SOT-363
- Supplier Device Package：PG-SOT363-PO
- Grade：-
- Qualification：-
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Overview
The BCM856SH6327XTSA1 is a PNP Silicon AF Transistor Array manufactured by Infineon Technologies. It contains two galvanically isolated transistors in an SOT363 package. The device features a collector-emitter voltage (VCEO) of 65 V and a collector-base voltage (VCBO) of 80 V. Maximum continuous collector current is 100 mA, with a peak current capability of 200 mA for pulses up to 10 ms. Total power dissipation is rated at 250 mW at a case temperature of 115 °C. The transition frequency (fT) reaches 250 MHz at IC = 20 mA. DC current gain (hFE) ranges from 200 to 450 at IC = 2 mA. The component is Pb-free, RoHS compliant, and qualified according to AEC-Q101 standards.
Feature Summary
- Precision matched transistor pair with collector current matching within ±10% for current mirror applications
- Low collector-emitter saturation voltage for efficient switching performance
- Two internally galvanic isolated transistors providing independent signal paths
Applications
- Current mirror circuits requiring precision matching
- General purpose amplification and switching applications
- Automotive electronics systems meeting AEC-Q101 requirements
Procurement Notes
Verify the specific ordering suffix against official Infineon documentation to confirm packaging details and reel orientation. Ensure compliance with RoHS directives and AEC-Q101 automotive qualification requirements before integration into final designs. Cross-reference datasheet revision dates to validate parameter consistency.
Selection Notes
Select this component when dual isolated PNP transistors with high current gain are required. The precision matching characteristic makes it suitable for analog signal processing where transistor symmetry is critical. Consider the thermal resistance and power derating curves for high-temperature environments.
Part Context
This part belongs to the BCM856S family of PNP silicon AF transistor arrays. It serves as the complement to the NPN type BCM846S. The device is designed for general-purpose audio frequency and switching applications in surface-mount technology formats.
Replacement Considerations
BC856S: General purpose alternative without guaranteed AEC-Q101 qualification or precision matching specifications.
FAQ
What is the maximum collector-emitter breakdown voltage?
The maximum collector-emitter breakdown voltage (V(BR)CEO) is 65 V.
How is the transistor matching defined?
Matching is defined by the difference in collector currents (∆IC), which is specified to be within ±10% under test conditions of IB = 1 µA and VCE1 = VCE2 = 1.0 V.
Is the component qualified for automotive applications?
Yes, the BCM856S is qualified according to the AEC-Q101 standard.
