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The BCM856SH6433XTMA1 is a PNP silicon AF transistor array from Infineon Technologies, packaged in SOT363. It contains two galvanically isolated internal transistors with precision matching (∆IC ≤ 10%). Key electrical parameters include a collector-emitter voltage (VCEO) of 65 V and a maximum collector current (IC) of 100 mA. The device features a transition frequency (fT) of 250 MHz at IC = 20 mA. It operates within a junction temperature range of -65 °C to 150 °C and complies with AEC Q101 standards.
Verify the specific suffix XTMA1 against official Infineon documentation to confirm tape-and-reel packaging specifications and orientation requirements. Ensure the component meets RoHS compliance and AEC Q101 qualification status required for your target application environment before finalizing procurement orders.
Select this component when dual isolated PNP transistors with tight current matching are necessary. The SOT363 package suits space-constrained designs. Consider the 65 V VCEO rating and 100 mA IC limit for circuit design. Verify thermal resistance RthJS of 140 K/W for heat dissipation planning under specified operating conditions.
This part belongs to the BCM856S family of PNP transistor arrays. It serves as the complement to the NPN type BCM846S. The series is designed for general-purpose analog and switching applications where matched characteristics and isolation between pairs are critical performance factors.
Check for direct pin-compatible alternatives within the same SOT363 footprint. Verify that substitute parts meet the 65 V VCEO and 100 mA IC ratings. Ensure replacement components offer comparable ∆IC matching and fT performance if used in precision analog circuits.