BCM856SH6778XTSA1

Overview

The BCM856SH6778XTSA1 is a PNP silicon transistor array from Infineon Technologies, packaged in SOT363. It contains two galvanically isolated transistors with precision matching (∆IC ≤ 10%). Key electrical parameters include a collector-emitter voltage (VCEO) of 65 V, collector-base voltage (VCBO) of 80 V, and emitter-base voltage (VEBO) of 5 V. The maximum continuous collector current is 100 mA, with a peak current of 200 mA for pulses under 10 ms. Total power dissipation is 250 mW at 115 °C case temperature. DC current gain (hFE) ranges from 200 to 450 at IC = 2 mA. Transition frequency (fT) is typically 250 MHz at IC = 20 mA.

Feature Summary

• Precision matched transistor pair suitable for current mirror applications
• Low collector-emitter saturation voltage
• Two internally isolated transistors

Applications

• Current mirror circuits
• General-purpose amplification
• Switching applications

Procurement Notes

Verify the component against official Infineon datasheets to confirm exact specifications and package details. Ensure compliance with RoHS standards and AEC Q101 qualification requirements before integration into designs.

Selection Notes

Select this component for applications requiring matched PNP pairs or low saturation voltages. Consider the SOT363 package size and thermal resistance when designing heat dissipation strategies.

Part Context

This part belongs to Infineon's BC856 series of PNP silicon transistor arrays. It is designed as a complementary type to the BCM846S NPN array. The device is qualified according to AEC Q101 standards for automotive applications.

Replacement Considerations

Check for direct pin-compatible alternatives from other manufacturers that meet the same electrical specifications and package dimensions. Verify if the BCM846S is required for complementary circuit designs.