BCM857BS-7-F

Overview

The BCM857BS-7-F is a matched pair of PNP transistors manufactured by Diodes Incorporated in the SOT363 surface-mount package. It features a collector-emitter voltage (VCEO) of -45 V and a continuous collector current (IC) of -100 mA. The device provides a DC current gain (hFE) ranging from 220 to 475 at -2 mA, with a 10% matching tolerance between the two transistors. Base-emitter voltage matching is maintained within 2 mV. Electrical characteristics include a collector-base breakdown voltage of -50 V, an emitter-base breakdown voltage of -5 V, and a transition frequency (fT) of 100 MHz. Power dissipation is rated at 200 mW, with an operating temperature range spanning from -65°C to +150°C.

Feature Summary

• Intrinsically matched PNP transistor pair utilizing adjacent die for high precision
• Fully internally isolated structure within a compact SMD plastic package
• Compliant with RoHS directives and halogen-free manufacturing standards

Applications

• Current mirror circuits requiring precise gain tracking
• Differential amplifier stages demanding low offset voltages
• General-purpose signal processing in portable electronics

Procurement Notes

Verify the specific ordering suffix '-7-F' against official Diodes documentation to confirm reel size and tape width specifications. Ensure that the procurement channel sources components directly from authorized distributors to guarantee authenticity and adherence to the manufacturer's standard terms and conditions.

Selection Notes

Select this component when circuit design requires matched PNP transistors with guaranteed hFE and VBE tolerances. The SOT363 package is suitable for space-constrained layouts. Evaluate thermal resistance and power dissipation limits under actual operating ambient temperatures to ensure reliable performance within the specified junction temperature range.

Part Context

This part belongs to the BCM857 series of matched double transistors produced by Diodes Incorporated. It serves as a specialized alternative to standard discrete transistors where parameter matching is critical. The product utilizes epitaxial die construction and is designed for general-purpose applications requiring high reliability in small form factors.

Replacement Considerations

Cross-reference with BCM857BS variants from other manufacturers such as Nexperia or NXP. Verify pinout compatibility and electrical parameter alignment before substitution. Note that packaging quantities and marking codes may differ across suppliers.

FAQ

What is the guaranteed matching tolerance for the current gain?

The datasheet specifies a 10% matching tolerance on the current gain (hFE) between the two transistors.

How is the base-emitter voltage matching defined?

The base-emitter voltage matching is limited to a maximum difference of 2 mV between the two transistors under specified test conditions.

What is the peak collector current rating?

The absolute maximum rating for peak collector current (ICM) is -200 mA.