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The BCM857BS,135 is a PNP/PNP matched double transistor manufactured by Nexperia USA Inc. It is housed in a TSSOP6 (SOT363-3) surface-mounted package with six leads. The device features fully isolated internal transistors and provides a collector-emitter voltage of -45 V and a continuous collector current of -100 mA per transistor. Total power dissipation is rated at 300 mW for the device and 200 mW per transistor at 25 °C ambient temperature. The DC current gain ranges from 200 to 450 at -2 mA collector current. Transition frequency reaches 175 MHz, and the junction temperature maximum is 150 °C.
Verify the specific ordering suffix against the manufacturer's official documentation to confirm packaging details such as reel size or tape width. Confirm that the non-automotive qualification status aligns with the intended application requirements before finalizing procurement orders.
Select this component when matched PNP characteristics are required in a compact SMD footprint. Ensure the design accommodates the 300 mW total power dissipation limit and verify thermal resistance values if operating near the 150 °C junction temperature maximum.
This part belongs to the BCM857 series of matched double transistors produced by Nexperia. It serves as a compact alternative to discrete dual transistor configurations, utilizing the SOT363-3 package to reduce board space while maintaining electrical symmetry between the paired devices.
BCM857BV
No, the BCM857BS is not automotive qualified. Customers requiring automotive-grade components should refer to Nexperia for suitable alternatives.
The base-emitter voltage matching (VBE1−VBE2) is specified as a maximum of 2 mV under conditions of VCE = -5 V, IC = -2 mA, and Tamb = 25 °C.