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The BCM857BSH-QF is a PNP/PNP matched double transistor manufactured by Nexperia, housed in an SOT363 (SC-88) TSSOP6 surface-mount package. It features a collector-emitter voltage of -45 V and a continuous collector current of -100 mA per transistor. The device offers a DC current gain ranging from 200 to 450 at -2 mA. Key electrical characteristics include a collector-base breakdown voltage of -50 V, an emitter-base voltage of -7 V, and a total power dissipation of 400 mW for the dual device. It supports junction temperatures up to 175 °C and includes tight matching specifications for current gain and base-emitter voltage.
Verify the specific suffix 'F' against official Nexperia documentation to confirm packaging details such as reel size or tape width, as datasheets typically list the base part number BCM857BSH-Q without specifying the trailing letter's physical implications. Confirm RoHS compliance status directly with the manufacturer before finalizing procurement orders.
Select this component when matched PNP transistor pairs are required for precision analog circuits. Ensure the design accommodates the -45 V collector-emitter voltage limit and the 400 mW total power dissipation constraint. Verify that the SOT363 footprint aligns with the PCB layout requirements for the 0.65 mm pitch package.
This device belongs to Nexperia's portfolio of small-signal matched double transistors designed for compact surface-mount applications. It serves as the PNP counterpart to the NPN/NPN BCM847BSH-Q. The SOT363 package allows for space-efficient designs in portable electronics and automotive modules where component density is critical.
BCM857BSH-Q