BCM857BSH-QF

BCM857BSH-QF

$0.08
  • Description:TRANS 2PNP 45V 100MA 6-TSSOP
  • Series:-

SKU:3babff32b8eb Category: Brand:

  
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Product Detailed Parameters

  • Description:TRANS 2PNP 45V 100MA 6-TSSOP
  • Series:-
  • Mfr:Nexperia USA Inc.
  • Package:Tape & Reel (TR)
  • Transistor Type:2 PNP (Dual) Matched Pair
  • Current - Collector (Ic) (Max):100mA
  • Voltage - Collector Emitter Breakdown (Max):45V
  • Vce Saturation (Max) @ Ib, Ic:300mV @ 5mA, 100mA
  • Current - Collector Cutoff (Max):15nA (ICBO)
  • DC Current Gain (hFE) (Min) @ Ic, Vce:200 @ 2mA, 5V
  • Power - Max:270mW
  • Frequency - Transition:100MHz
  • Operating Temperature:175°C (TJ)
  • Mounting Type:Surface Mount
  • Package / Case:6-TSSOP, SC-88, SOT-363
  • Supplier Device Package:6-TSSOP
  • Grade:Automotive
  • Qualification:AEC-Q101

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BCM857BSH-QF

Overview

The BCM857BSH-QF is a PNP/PNP matched double transistor manufactured by Nexperia, housed in an SOT363 (SC-88) TSSOP6 surface-mount package. It features a collector-emitter voltage of -45 V and a continuous collector current of -100 mA per transistor. The device offers a DC current gain ranging from 200 to 450 at -2 mA. Key electrical characteristics include a collector-base breakdown voltage of -50 V, an emitter-base voltage of -7 V, and a total power dissipation of 400 mW for the dual device. It supports junction temperatures up to 175 °C and includes tight matching specifications for current gain and base-emitter voltage.

Feature Summary

  • AEC-Q101 qualified for automotive applications with high-temperature operation up to 175 °C
  • Tight current gain and base-emitter voltage matching between transistors
  • Low collector capacitance and low collector-emitter saturation voltage
  • No mutual interference between the two internal transistors

Applications

  • Current mirror circuits
  • Differential amplifier configurations

Procurement Notes

Verify the specific suffix 'F' against official Nexperia documentation to confirm packaging details such as reel size or tape width, as datasheets typically list the base part number BCM857BSH-Q without specifying the trailing letter's physical implications. Confirm RoHS compliance status directly with the manufacturer before finalizing procurement orders.

Selection Notes

Select this component when matched PNP transistor pairs are required for precision analog circuits. Ensure the design accommodates the -45 V collector-emitter voltage limit and the 400 mW total power dissipation constraint. Verify that the SOT363 footprint aligns with the PCB layout requirements for the 0.65 mm pitch package.

Part Context

This device belongs to Nexperia's portfolio of small-signal matched double transistors designed for compact surface-mount applications. It serves as the PNP counterpart to the NPN/NPN BCM847BSH-Q. The SOT363 package allows for space-efficient designs in portable electronics and automotive modules where component density is critical.

Replacement Considerations

BCM857BSH-Q

BCM857BSH-QFBCM857BSH-QF
$0.08
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