BCM857BSH-QX

Overview

The BCM857BSH-Q is a PNP/PNP matched double transistor housed in a SOT363 (SC-88) surface-mounted plastic package. It features a collector-emitter voltage of -45 V and a continuous collector current of -100 mA per transistor, with peak ratings of -200 mA. The device offers a typical DC current gain (hFE) of 300 at -2 mA and -5 V. Key electrical characteristics include low collector capacitance (1.8 pF typical) and tight matching between transistors, with hFE matching within 0.95 to 1.05 and base-emitter voltage difference limited to 2 mV. It supports junction temperatures up to 175 °C and is qualified for automotive applications.

Feature Summary

• Low collector capacitance and saturation voltage for efficient switching
• Precise current gain and base-emitter voltage matching between dual transistors
• High-temperature operation capability up to 175 °C junction temperature
• Qualified according to AEC-Q101 standards for automotive reliability

Applications

• Current mirror circuits
• Differential amplifier configurations

Procurement Notes

Verify the specific ordering suffix against the manufacturer's latest documentation to confirm packaging details and manufacturing site codes. Ensure that the procurement channel provides valid traceability for AEC-Q101 qualified components intended for automotive use. Cross-reference the marking code '7B%' with production batches to maintain quality assurance standards during component sourcing.

Selection Notes

Select this component when precise matching between two PNP transistors is required in a minimal footprint. The SOT363 package suits space-constrained designs. Consider the 175 °C thermal rating for high-temperature environments. Verify that the -45 V breakdown voltage meets the circuit requirements. The complementary NPN/NPN version is available as the BCM847BSH-Q if an NPN configuration is needed instead.

Part Context

This part belongs to Nexperia's portfolio of small-signal matched double transistors designed for surface-mount assembly. It serves as a drop-in replacement for standard discrete double transistors while offering superior matching characteristics due to monolithic construction. The SOT363 package allows for high-density PCB layouts compared to larger through-hole or standard SMD packages.

Replacement Considerations

The BCM847BSH-Q is the documented NPN/NPN complement. Designers should verify pin compatibility and polarity inversion when substituting with other matched double transistor families. Check thermal resistance values and package dimensions to ensure mechanical fit on existing footprints.