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The BCM857BSHF is a PNP/PNP matched double transistor manufactured by Nexperia USA Inc. It is housed in a TSSOP6 (SOT363) surface-mounted plastic package with six leads and a 0.65 mm pitch. The device supports a collector-emitter voltage of -45 V and a continuous collector current of -100 mA per transistor, with a peak collector current of -200 mA. Total power dissipation reaches 400 mW for the device and 270 mW per transistor at 25 °C ambient temperature. The junction temperature maximum is 175 °C, and the DC current gain ranges from 200 to 450.
Verify the specific suffix 'HF' against official Nexperia documentation to confirm tape-and-reel packaging details or manufacturing site codes. Ensure the component matches the SOT363 package outline dimensions and pin configuration before integration into production designs.
Select this component when low collector capacitance and tight base-emitter voltage matching are required for high-temperature environments. It serves as a direct drop-in replacement for standard double transistors while reducing board space and eliminating mutual interference between internal transistors.
This part belongs to the BCM857 series of matched double transistors. The NPN/NPN complement is the BCM847BSH. Both devices utilize the ultra-small SOT363 (SC-88) package designed for surface-mount applications requiring minimal footprint and high thermal performance.
BCM857BSH
The maximum junction temperature is 175 °C.
The base-emitter voltage matching is specified as a maximum difference of 2 mV when VCE = -5 V, IC = -2 mA, and Tamb = 25 °C.
The transition frequency is typically 100 MHz under conditions of VCE = -5 V, IC = -10 mA, and f = 100 MHz at 25 °C.