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Product Detailed Parameters
- Description：TRANS 2PNP 45V 100MA SOT-563
- Series：-
- Mfr：Diodes Incorporated
- Package：Tape & Reel (TR),Cut Tape (CT)
- Transistor Type：2 PNP (Dual)
- Current - Collector (Ic) (Max)：100mA
- Voltage - Collector Emitter Breakdown (Max)：45V
- Vce Saturation (Max) @ Ib, Ic：400mV @ 5mA, 100mA
- Current - Collector Cutoff (Max)：15nA (ICBO)
- DC Current Gain (hFE) (Min) @ Ic, Vce：200 @ 2mA, 5V
- Power - Max：357mW
- Frequency - Transition：175MHz
- Operating Temperature：-65°C ~ 150°C (TJ)
- Mounting Type：Surface Mount
- Package / Case：SOT-563, SOT-666
- Supplier Device Package：SOT-563
- Grade：-
- Qualification：-
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Overview
The BCM857BV-7 is a dual PNP small signal transistor manufactured by Diodes Incorporated in an SOT563 surface-mount package. It features a collector-emitter voltage (VCEO) of -45 V and a continuous collector current (IC) of -100 mA. The device provides a total power dissipation of 500 mW and operates within a temperature range of -65 °C to +150 °C. Key electrical characteristics include a DC current gain (hFE) ranging from 200 to 450, a typical gain-bandwidth product (fT) of 175 MHz, and tight matching specifications: 2% on hFE and 2 mV on base-emitter voltage (VBE).
Feature Summary
- Intrinsically matched pair of PNP transistors built with adjacent die for high precision.
- Fully internally isolated structure within a compact SOT563 package.
- High collector current capability of -100 mA with a breakdown voltage exceeding -45 V.
Applications
- General-purpose switching applications requiring matched transistor pairs.
- Low-voltage analog signal processing circuits.
- Automotive electronics utilizing AEC-Q101 qualified components.
Procurement Notes
Verify the specific ordering suffix '-7' corresponds to the standard 3,000-unit reel packaging configuration. Confirm that the component meets RoHS 3 compliance standards and is halogen-free if required by your manufacturing process. Ensure the supplier provides traceability documentation for automotive-grade applications.
Selection Notes
Select this component when precise current gain and base-emitter voltage matching between two transistors is critical. The SOT563 package offers a smaller footprint compared to traditional dual transistor packages. Consider the 500 mW total power dissipation limit when designing thermal management strategies for dense PCB layouts.
Part Context
This part belongs to the BCM857 series of matched PNP transistors. It serves as a drop-in replacement for standard discrete dual transistors where space constraints and matching accuracy are primary design drivers. The intrinsic matching eliminates the need for external trimming or selection of individual discrete components.
Replacement Considerations
BCM857BS-7-F
FAQ
What is the maximum collector-base voltage for the BCM857BV-7?
The absolute maximum collector-base voltage (VCBO) is -50 V.
How is the current gain matching defined for this device?
The current gain matching is specified as 2%, calculated by taking the ratio of the smaller hFE value to the larger one under test conditions of VCE = -5.0 V and IC = -2.0 mA.
Is the BCM857BV-7 suitable for automotive applications?
Yes, the component is qualified to AEC-Q101 standards for high reliability, making it suitable for automotive applications requiring specific change control.
