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The BCM857BV,115 is a PNP/PNP matched double transistor manufactured by Nexperia. It is housed in an ultra-small SOT666 surface-mounted device plastic package with fully isolated internal transistors. The component supports a collector-emitter voltage of -45 V and a continuous collector current of -100 mA per transistor. Total power dissipation reaches 300 mW for the device at ambient temperatures up to 25 °C. DC current gain ranges from 200 to 450 at -2 mA collector current. Transition frequency is specified between 100 MHz and 175 MHz. Operating junction temperature extends up to 150 °C.
Verify the specific ordering suffix against official Nexperia documentation before procurement. Confirm that the component status aligns with design requirements, as product availability and lifecycle stages may change. Ensure compatibility with the intended PCB footprint and soldering process specifications provided in the datasheet.
Select this component when matched PNP characteristics are required for precision analog circuits. The SOT666 package offers reduced board space compared to dual SC-75 or SC-89 packages. Verify thermal resistance limits and ensure adequate heat dissipation on the FR4 PCB if operating near maximum power dissipation ratings.
This part belongs to the BCM857 family of matched double transistors produced by Nexperia. It serves as a compact alternative to discrete dual transistor configurations. The SOT666 package provides flat leads for improved coplanarity and thermal performance. It is designed for general-purpose switching and amplification applications requiring tight parameter matching.
BCM857BS,135
The maximum emitter-base voltage (VEBO) is rated at -5 V.
The DC current gain matching (hFE1/hFE2) has a minimum ratio of 0.9 and a typical value of 1.
Reflow soldering is the only recommended soldering method for this component.