BCM857BV,315

Overview

The BCM857BV,315 is a PNP/PNP matched double transistor manufactured by Nexperia USA Inc. It is housed in an ultra-small and flat lead SOT666 Surface-Mounted Device plastic package with fully isolated internal transistors. The device features a collector-emitter voltage (VCEO) of -45 V and a continuous collector current (IC) of -100 mA per transistor. DC current gain (hFE) ranges from 200 to 450 at VCE = -5 V and IC = -2 mA. Total power dissipation is limited to 200 mW per transistor and 300 mW per device at Tamb ≤ 25 °C. The transition frequency (fT) reaches 175 MHz.

Feature Summary

• Current gain matching between the two transistors
• Base-emitter voltage matching for precision applications
• Fully isolated internal structure within the SOT666 package

Applications

• Current mirror circuits
• Differential amplifier configurations

Procurement Notes

Verify the specific ordering suffix against the manufacturer's official documentation to confirm packaging details and availability status. Confirm that the component meets all required environmental standards and RoHS compliance specifications before finalizing procurement orders for production integration.

Selection Notes

Select this component when precise matching of current gain and base-emitter voltage is required for dual PNP transistor applications. Ensure the design accommodates the SOT666 package dimensions and thermal constraints. Verify that the operating conditions remain within the specified absolute maximum ratings for voltage, current, and power dissipation.

Part Context

This part belongs to the BCM857 series of matched double transistors produced by Nexperia. It serves as a drop-in replacement for standard double transistors in compact designs. The SOT666 package provides a small footprint suitable for space-constrained surface-mount applications requiring high performance.

Replacement Considerations

Check datasheets for alternative packages like SOT-363 or SOT-457 if pinout compatibility differs. Verify electrical parameters such as hFE range and power dissipation limits to ensure functional equivalence in the target circuit design.

FAQ

What is the maximum total power dissipation for the BCM857BV?

The total power dissipation is 200 mW per transistor and 300 mW per device when the ambient temperature is less than or equal to 25 °C.

How are the transistors internally configured in the SOT666 package?

The transistors are fully isolated internally within the ultra-small and flat lead SOT666 Surface-Mounted Device plastic package.

What is the typical base-emitter voltage matching tolerance?

The base-emitter voltage matching (VBE1−VBE2) is typically within 2 mV under conditions of VCE = -5 V, IC = -2 mA, and Tamb = 25 °C.