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The BCM857DS,135 is a PNP/PNP matched double transistor manufactured by Nexperia USA Inc. It is housed in a SOT457 (SC-74) TSOP6 surface-mount package with six leads. The device features fully isolated internal transistors and is qualified to AEC-Q101 standards for automotive applications. Key electrical parameters include a collector-emitter voltage of -45 V, a collector current of -100 mA per transistor, and a total power dissipation of 380 mW. The DC current gain ranges from 200 to 450 at -2 mA, with a transition frequency up to 175 MHz.
Verify the specific ordering suffix against official Nexperia documentation to confirm packaging type and reel specifications. Confirm that the component meets the required AEC-Q101 qualification status for your target application environment. Ensure compatibility with standard SOT457 footprints during PCB layout planning.
Select this component when precise matching between dual PNP transistors is required for analog signal processing. The low base-emitter voltage mismatch makes it suitable for precision current mirrors. Verify thermal resistance requirements against your board's copper area and ambient temperature conditions.
This part belongs to the BCM857 series of matched double transistors produced by Nexperia. It serves as a drop-in replacement for standard discrete double transistors in compact designs. The SOT457 package allows for space-efficient surface mounting on printed circuit boards.
BCM857BS,135
The base-emitter voltage matching (VBE1−VBE2) is specified as a maximum of 2 mV under conditions of VCE = -5 V, IC = -2 mA, and Tamb = 25 °C.
Yes, the product has been qualified in accordance with the Automotive Electronics Council (AEC) standard Q101 and is suitable for use in automotive applications.
The transition frequency (fT) is typically 175 MHz, measured at VCE = -5 V, IC = -10 mA, and f = 100 MHz.