BCP 69-16 E6327

Overview

The BCP69E6327 is a power bipolar transistor manufactured by Infineon Technologies, originally associated with Siemens. It is a single-element PNP silicon device housed in a plastic/epoxy small outline package with three gull-wing terminals. The component supports a maximum collector current of 1 A and a collector-emitter breakdown voltage of 20 V. It features a minimum DC current gain (hFE) of 85 and a nominal transition frequency (fT) of 100 MHz. The part is surface mountable and designed for amplifier applications.

Feature Summary

• PNP polarity configuration for signal amplification
• Surface mount small outline packaging for compact integration
• Silicon construction with plastic/epoxy encapsulation

Applications

• Amplifier circuits

Procurement Notes

Verify the manufacturer origin, as the specific part number BCP69E6327 is documented under the Siemens brand name in available records. Confirm that the E6327 suffix corresponds to the correct tape-and-reel or tube packaging variant required for your assembly process. Ensure the component meets RoHS compliance standards if applicable to your manufacturing environment.

Selection Notes

Select this component when a low-voltage PNP transistor with moderate current handling capabilities is required for linear amplifier stages. The 20 V breakdown voltage limits its use to low-power signal processing tasks. Consider the 100 MHz transition frequency for bandwidth requirements and ensure the small outline package fits the designated PCB footprint constraints.

Part Context

This component belongs to the broader category of discrete bipolar transistors used in analog electronics. While Infineon Technologies is the primary reference for modern semiconductor catalogs, this specific part number retains historical documentation links to Siemens, reflecting corporate acquisitions and product line integrations within the industry.