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Product Detailed Parameters
- Description：TRANS PNP 45V 1A SOT-223
- Series：-
- Mfr：Nexperia USA Inc.
- Package：Tape & Reel (TR),Cut Tape (CT)
- Transistor Type：PNP
- Current - Collector (Ic) (Max)：1:00 AM
- Voltage - Collector Emitter Breakdown (Max)：45 V
- Vce Saturation (Max) @ Ib, Ic：500mV @ 50mA, 500mA
- Current - Collector Cutoff (Max)：100nA (ICBO)
- DC Current Gain (hFE) (Min) @ Ic, Vce：63 @ 150mA, 2V
- Power - Max：650 mW
- Frequency - Transition：145MHz
- Operating Temperature：150°C (TJ)
- Mounting Type：Surface Mount
- Package / Case：TO-261-4, TO-261AA
- Supplier Device Package：SOT-223
- Grade：Automotive
- Qualification：AEC-Q100
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Overview
The BCP51-10-QX is a PNP medium power transistor from the Nexperia BCP51-Q series, housed in a SOT223 (SC-73) surface-mounted plastic package. It supports a collector-emitter voltage of -45 V and a continuous collector current of -1 A, with a peak pulse current capability of -2 A. The device features three current gain selections; the '10' suffix denotes an hFE range of 63 to 160 at VCE = -2 V and IC = -150 mA. Qualified under AEC-Q101, it offers high power dissipation up to 1.35 W on a 6 cm² copper pad and is designed for automotive environments.
Feature Summary
- AEC-Q101 qualified for automotive reliability
- High current handling with medium power dissipation
- Three distinct DC current gain (hFE) binning options
- Leadless SOT223 package with exposed heatsink
Applications
- Linear voltage regulators
- High-side switches
- Battery-driven devices
- Power management circuits
- MOSFET drivers
Procurement Notes
Verify the specific ordering code matches the required gain bin. The '10' suffix indicates the 63-160 hFE range. Confirm the package type is SOT223. Ensure the application meets AEC-Q101 automotive standards if specified. Check thermal design against the provided derating curves for the target PCB footprint.
Selection Notes
Select this component when a PNP transistor with -45 V rating and -1 A current capacity is needed in a compact SMD form factor. Choose the '-10-Q' variant specifically for applications requiring the lower hFE window of 63 to 160. Consider the exposed collector pad for thermal management if operating near maximum power dissipation limits.
Part Context
This part belongs to the BCP51-Q series of PNP medium power transistors. Other variants include BCP51-Q (hFE 63-250) and BCP51-16-Q (hFE 100-250). All share the same electrical ratings and package but differ in gain selection. The series is designed for robust performance in demanding electronic systems.
Replacement Considerations
Direct substitutes within the same family are BCP51-Q and BCP51-16-Q, differing only in DC current gain ranges. Verify that the alternative gain bin fits the circuit biasing requirements before substitution.
FAQ
What does the '10' suffix indicate in the BCP51-10-QX part number?
The '10' suffix specifies the DC current gain (hFE) binning, which ranges from 63 to 160 at VCE = -2 V and IC = -150 mA.
Is the BCP51-10-QX suitable for automotive applications?
Yes, the device is qualified according to the AEC-Q101 standard and is recommended for use in automotive applications.
What is the maximum peak collector current for this transistor?
The maximum peak collector current (ICM) is -2 A for a single pulse duration of tp ≤ 1 ms.
