BCP52-10,135

Overview

The Nexperia BCP52-10,135 is a PNP medium power transistor housed in a SOT223 (SC-73) surface-mounted device plastic package. It supports a collector-emitter voltage of -60 V and a continuous collector current of -1 A. The component features three DC current gain selections; the -10 suffix specifies an hFE range of 63 to 160 at IC = -150 mA. It includes an exposed heatsink for thermal management and is qualified under AEC-Q101 standards.

Feature Summary

• High current capability with peak pulse support
• Exposed heatsink for enhanced thermal conductivity
• Automotive grade qualification via AEC-Q101
• Three distinct current gain selection groups

Applications

• Linear voltage regulators
• High-side switches
• MOSFET drivers
• Power management circuits
• Amplifiers

Procurement Notes

Verify the specific ordering code suffix matches the required gain bin. Confirm the package variant corresponds to the design footprint. Ensure the application environment aligns with the specified temperature ranges. Check for any recent product change notices affecting specifications or compliance status before finalizing procurement.

Selection Notes

Select this component when a PNP medium power transistor with high current handling is required in a SOT223 package. The -10 suffix provides a lower gain band suitable for specific biasing needs. Consider the exposed pad thermal requirements for PCB layout. Verify compatibility with the NPN complement BCP55 if complementary pairs are needed.

Part Context

This part belongs to the BCP52 series of PNP medium power transistors from Nexperia. It shares electrical characteristics with the BCX52 and BC52PA variants but differs in package type. The SOT223 package offers higher power dissipation capabilities compared to smaller signal packages while maintaining surface-mount convenience.

Replacement Considerations

BCP55 is the NPN complement within the same family. Other BCP52 variants with different gain suffixes (-16) may be used if gain requirements differ.