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The Nexperia BCP53-10TF is a PNP medium power transistor housed in an SOT223 (SC-73) surface-mount package. It features a collector-emitter voltage of -80 V and a continuous collector current of -1 A, with a peak pulse current capability of -2 A. The device offers a DC current gain range of 63 to 160 at VCE = -2 V and IC = -150 mA. It supports a maximum total power dissipation of up to 1.8 W depending on PCB mounting conditions and operates within a junction temperature range of -55 °C to 150 °C.
Verify the specific suffix 'TF' against the official datasheet to confirm packaging details such as tape and reel specifications. Ensure the ordering information matches the required quantity increments and that the component meets the intended environmental and reliability standards for the target application.
Select this component when a PNP transistor with 80 V breakdown and 1 A current handling is required in a compact SOT223 footprint. Consider the specific hFE binning (-10T selection) to ensure compatibility with base drive requirements. Evaluate thermal resistance values based on the specific PCB copper area and layer configuration used in the design.
This part belongs to the BCP53T series of PNP medium power transistors manufactured by Nexperia. The series includes variants with different current gain ranges, specifically the standard BCP53T, the lower gain BCP53-10T, and the higher gain BCP53-16T. All share the same electrical limits and physical package dimensions.
The NPN complement for this device is the BCX56T series. For direct replacement within the same family, verify if the BCP53-16T or standard BCP53T meets the specific gain requirements, noting that only the -10T variant has the specified 63-160 gain range.