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The Nexperia BCP53-16T-Q is a PNP medium power transistor in an SOT223 package. It features a collector-emitter voltage of -80 V and a continuous collector current of -1 A, with a peak pulse current of -2 A. The DC current gain (hFE) ranges from 100 to 250 at VCE = -2 V and IC = -150 mA. Total power dissipation reaches 1.3 W on a standard FR4 PCB. Qualified under AEC-Q101, it operates within a junction temperature range of -55 °C to 150 °C.
Verify the specific ordering suffix against the official Nexperia datasheet to confirm the exact hFE binning and packaging configuration. Ensure the component meets the required AEC-Q101 qualification standards for the target automotive application environment before finalizing procurement specifications.
Select this component when designing circuits requiring a robust PNP transistor with high current handling and automotive reliability. The specified hFE range suits applications needing consistent amplification or switching performance. Evaluate thermal dissipation requirements based on the intended PCB copper area and layer count to ensure operation remains within safe limits.
This device belongs to the BCP53T-Q series, which includes variants with different current gain bins (-10T-Q and -16T-Q). All series members share the same SOT223 package and electrical ratings but differ in their DC current gain specifications. The NPN complement for this series is the BCP56T-Q.
BCP56T-Q (NPN complement)
The marking code for the BCP53-16T-Q is P5316T.
The peak collector current (ICM) is -2 A for a single pulse with a duration of tp ≤ 1 ms.
Yes, the product is qualified according to the AEC-Q101 standard and is recommended for use in automotive applications.