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Product Detailed Parameters
- Description：TRANS PNP 80V 1A SOT-223-3
- Series：-
- Mfr：Diodes Incorporated
- Package：Tape & Reel (TR),Cut Tape (CT)
- Transistor Type：PNP
- Current - Collector (Ic) (Max)：1:00 AM
- Voltage - Collector Emitter Breakdown (Max)：80 V
- Vce Saturation (Max) @ Ib, Ic：500mV @ 50mA, 500mA
- Current - Collector Cutoff (Max)：100nA (ICBO)
- DC Current Gain (hFE) (Min) @ Ic, Vce：63 @ 150mA, 2V
- Power - Max：2 W
- Frequency - Transition：150MHz
- Operating Temperature：-65°C ~ 150°C (TJ)
- Mounting Type：Surface Mount
- Package / Case：TO-261-4, TO-261AA
- Supplier Device Package：SOT-223-3
- Grade：-
- Qualification：-
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Overview
The BCP5310TA is a PNP medium power transistor manufactured by Diodes Incorporated in an SOT223 surface-mount package. It features a collector-emitter breakdown voltage (BVCEO) of -80V and supports a continuous collector current (IC) of -1A with a peak pulse current (ICM) of -2A. The device provides a maximum power dissipation (PD) of 2W at +25°C, with a thermal resistance from junction to ambient (RθJA) of 62 °C/W. Electrical characteristics include a low saturation voltage VCE(sat) of less than -500mV at -0.5A and a transition frequency (fT) of 150MHz. It belongs to gain group 10, with a DC current gain (hFE) range of 63 to 160 at IC = -150mA.
Feature Summary
- Qualified to AEC-Q101 standards for high reliability and capable of PPAP submission.
- Offers low saturation voltage for efficient switching performance.
- Compliant with RoHS directives and free from halogen and antimony.
- Provides complementary NPN types within the same product family.
Applications
- Medium power switching applications
- Amplification circuits
- Audio frequency driver stages
- Audio frequency output stages
Procurement Notes
Verify that the ordering suffix TA corresponds to the specific reel size and tape width required for your automated assembly line. Confirm compliance requirements such as AEC-Q101 qualification if the application demands automotive-grade reliability. Ensure the selected part matches the exact gain group specifications needed for circuit design consistency.
Selection Notes
Select this component when an 80V PNP transistor with 1A continuous current capability is required. Consider the SOT223 package for its thermal dissipation properties relative to smaller packages. Evaluate the hFE gain group against the base drive requirements of the target circuit to ensure proper saturation or amplification margins are met during operation.
Part Context
This device is part of the BCP51/52/53 series of PNP medium power transistors. The BCP53 variant specifically denotes the -80V breakdown voltage rating, distinguishing it from the lower voltage BCP51 (-45V) and BCP52 (-60V) models. All variants share identical pinouts and mechanical dimensions, facilitating direct substitution based on voltage requirements.
Replacement Considerations
BCP53QTA
FAQ
What is the DC current gain range for the BCP5310TA?
The BCP5310TA belongs to gain group 10, which specifies a DC current gain (hFE) range of 63 to 160 when measured at a collector current of -150mA and VCE of -2V.
Is the BCP5310TA suitable for automotive applications?
Yes, the BCP5310TA is qualified to AEC-Q101 standards for high reliability and is PPAP capable, making it suitable for automotive electronics.
What is the maximum power dissipation of the BCP5310TA?
The maximum power dissipation is 2W at an ambient temperature of +25°C, assuming the device is mounted on a 50mm x 50mm 1oz copper single-sided FR4 PCB under still air conditions.
