BCP55-10-TP

Overview

The BCP55-10-TP is a single NPN silicon planar power transistor manufactured by Micro Commercial Components (MCC). It utilizes SOT-223 surface-mount packaging and supports a continuous collector current of 1.0 A. The device features a collector-emitter breakdown voltage of 60 V and a collector-base breakdown voltage of 60 V. Electrical characteristics include a transition frequency of 100 MHz, a maximum collector power dissipation of 1.5 W, and a thermal resistance junction-to-ambient of 83.3 °C/W. Operating temperatures range from -55 °C to +150 °C.

Feature Summary

• Designed for AF driver and output stages
• High collector current capability
• Low collector-emitter saturation voltage

Applications

• Audio frequency driver stages
• Audio frequency output stages
• General-purpose amplifier circuits

Procurement Notes

Verify the component datasheet against the manufacturer's official documentation to confirm electrical parameters and pinout configurations. Ensure compliance with RoHS standards and moisture sensitivity level requirements. Confirm that the ordering suffix matches the specific gain binning required for the application design.

Selection Notes

Select this component for applications requiring high collector current and low saturation voltage in an SOT-223 package. Consider the complementary PNP types BCP51 through BCP53 for push-pull configurations. Evaluate the thermal resistance and power dissipation limits relative to the ambient operating temperature conditions.

Part Context

This part belongs to the BCP54/BCP55/BCP56 series of plastic-encapsulated transistors. The '10' designation indicates a specific DC current gain classification range of 63 to 160 at 150 mA. The '-TP' suffix denotes tape-and-reel packaging containing 2500 pieces per reel.

Replacement Considerations

Complementary types: BCP51, BCP52, BCP53 (PNP). Other variants in the series include BCP54-10-TP and BCP56-10-TP.