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The BCP55-16 is an NPN silicon medium power transistor manufactured by Diotec Semiconductor. It features a maximum continuous collector current of 1 A and a collector-emitter voltage rating of 60 V. The device utilizes the SOT-223 surface-mount package, which facilitates efficient thermal dissipation with a power dissipation capacity of 2 W. Designed for general-purpose applications, it offers a minimum DC current gain (hFE) of 25 at a collector current of 150 mA. The component operates within a temperature range of -55 °C to +150 °C.
Verify the specific suffix designation against the manufacturer's official datasheet to confirm the exact electrical parameters, particularly the collector-emitter voltage rating, as variations exist within the product family. Ensure the selected variant matches the required thermal management specifications for the intended application environment.
Select this component when a medium-power NPN transistor with a 1 A current rating and 60 V breakdown voltage is required in a surface-mount format. Consider the complementary PNP type for push-pull configurations. Evaluate the thermal resistance characteristics of the SOT-223 package to ensure adequate heat dissipation under maximum load conditions.
This part belongs to the BCP series of medium power transistors from Diotec Semiconductor. The series includes complementary NPN and PNP types designed for audio and general-purpose switching applications. These devices are characterized by their high current handling capabilities and low saturation voltages, making them suitable for driving loads in consumer electronics and industrial control systems.
Compatible substitutes include the BCP55 from other manufacturers such as Nexperia or Diodes Inc., provided they share the SOT-223 package and identical electrical ratings.