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The onsemi BCP55 is an NPN general-purpose amplifier transistor designed for medium power applications requiring collector currents up to 1.0 A. It features a collector-emitter voltage (VCEO) of 60 V and a continuous collector current rating of 1.5 A. The device operates within a junction temperature range of -55°C to +150°C and offers a total device dissipation of 1.5 W. Packaged in the SOT-223 surface-mount format, it provides a DC current gain (hFE) ranging from 25 to 250 depending on operating conditions.
Verify the specific ordering suffix against official documentation to confirm package type and tape/reel specifications. Ensure compliance with RoHS requirements by checking for the Pb-Free indicator or microdot marking on the component body. Confirm that the supplier source matches the manufacturer's authorized distribution channels to guarantee authenticity and traceability.
Select this component when designing circuits that require an NPN transistor capable of handling 1.0 A continuous collector current with a 60 V breakdown voltage. The SOT-223 package is suitable for surface mount applications where moderate power dissipation is needed. Consider the hFE range of 25 to 250 for biasing calculations in amplifier designs.
The BCP55 belongs to onsemi's lineup of NPN general-purpose transistors manufactured using Process 38 technology. It is part of a series designed for robust performance in medium power applications. The device is commonly used alongside complementary PNP types like the BCP56 for push-pull configurations in audio and power supply circuits.
Consult official substitution guides for verified equivalents. Generic replacements may differ in thermal resistance or current gain characteristics.