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The BCP55E6327HTSA1 is a single NPN bipolar junction transistor manufactured by Infineon Technologies. It utilizes silicon technology and is housed in an SOT-223-4 surface-mount package. The device supports a maximum collector current of 1 A and a collector-emitter voltage of 60 V. Key electrical parameters include a power dissipation rating of 1 W, a transition frequency of 100 MHz, and a DC current gain (hFE) of at least 100 when tested at 50 mA and 5 V. The component operates within a temperature range from -55 °C to +150 °C.
Verify the specific datasheet revision and ordering suffix to ensure compatibility with design requirements. Confirm that the SOT-223-4 footprint matches the PCB layout constraints. Check for any recent lifecycle notices regarding production status or recommended replacements before finalizing procurement plans.
Select this component for designs requiring a single NPN transistor with a 1 A current capacity and 60 V voltage rating. Ensure the application fits within the 1 W power dissipation limit and the specified operating temperature range. Verify that the SOT-223-4 package dimensions are suitable for the assembly process.
This part belongs to the BCP55 series of single NPN transistors produced by Infineon Technologies. It is designed for general-purpose use and meets automotive quality standards. The SOT-223-4 package provides efficient heat dissipation compared to smaller surface-mount options, making it suitable for higher power applications.
Consult official Infineon documentation for verified substitute part numbers. Do not assume cross-compatibility with other manufacturers' parts without verifying pinout, electrical ratings, and package dimensions.