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The BCP56-10-QF is an NPN medium power transistor from the Nexperia BCP56-Q series, housed in a SOT223 (SC-73) surface-mount package. It features an 80 V collector-emitter voltage rating and a continuous 1 A collector current capability. The device supports a peak collector current of 2 A for pulses up to 1 ms. DC current gain (hFE) is specified between 63 and 160 at VCE = 2 V and IC = 150 mA. Total power dissipation ranges from 0.65 W on a standard footprint to 1.35 W with a 6 cm² collector pad. Transition frequency reaches 180 MHz.
Verify the specific ordering suffix matches the required binning. Confirm the component status aligns with project timelines. Check the most recent datasheet revision for any updates to electrical characteristics or marking codes. Ensure compatibility with the intended PCB footprint and soldering process requirements.
Select this component when automotive qualification is mandatory. Choose based on the required hFE range; the -10 variant provides a gain of 63 to 160. Evaluate thermal constraints against the specific PCB copper area available. Consider the SOT223 package size relative to other medium power options.
This part belongs to the BCP56-Q series of NPN transistors designed for robust performance in demanding environments. The series includes variants with different gain bins (-Q, -10-Q, -16-Q). All share the same SOT223 package and core electrical ratings, differing primarily in amplification factors.
BCP53-10-Q is the PNP complement within the same qualified series.